FQD19N10L
— N-Channel QFET
®
MOSFET
November
2013
FQD19N10L
N-Channel QFET
®
MOSFET
100
V,
15.6
A,
100
mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 15.6 A, 100 V, R
DS(on)
= 100 mΩ (Max.) @ V
GS
= 10 V
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 35 pF)
• 100% Avalanche Tested
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings
T
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Symbol
Drain-Source Voltage
Drain Current
Drain Current
C
= 25 C unless otherwise noted.
o
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQD19N10LTM
100
15.6
9.8
62.4
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
- Derate
Above
25°C
Operating and Storage Temperature Range
Maximum
Lead Temperature
for
Soldering,
1/8" from
Case
for 5
Seconds
220
15.6
5.0
6.0
2.5
50
0.4
-55 to +150
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum
Pad
of 2-oz
Copper),
Max.
Thermal Resistance, Junction to Ambient (*1 in
2
Pad
of 2-oz
Copper),
Max.
FQD19N10LTM
2.5
110
50
o
C/W
Unit
©2000
Fairchild Semiconductor Corporation
FQD19N10L
Rev. C1
1
www.fairchildsemi.com
FQD19N10L
— N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQD19N10LTM
Top Mark
FQD19N10L
Package
D-PAK
o
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T
Symbol
Parameter
C
= 25 C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μA
I
D
= 250
μA,
Referenced to 25°C
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
--
--
--
--
--
--
0.09
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 7.8 A
V
GS
= 5 V, I
D
= 7.8 A
V
DS
= 30 V, I
D
= 7.8 A
1.0
--
--
--
0.074
0.082
14
2.0
0.10
0.11
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
670
160
35
870
210
45
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 80 V, I
D
= 19 A,
V
GS
= 5 V
(Note 4)
V
DD
= 50 V, I
D
= 19 A,
R
G
= 25
Ω
(Note 4)
--
--
--
--
--
--
--
14
410
20
140
14
2.9
9.2
38
830
50
290
18
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 15.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 19 A,
dI
F
/ dt = 100 A/μs
--
--
--
--
--
--
--
--
80
0.195
15.6
62.4
1.5
--
--
A
A
V
ns
μC
1. Repetitive
rating
:
pulse-width
limited by maximum junction temperature.
2. L = 1.35 mH, I
AS
=
15.6
A, V
DD
=
25
V, R
G
= 25
Ω,
starting
T
J
= 25
o
C.
3. I
SD
≤
19
A, di/dt ≤
300
A/μs, V
DD
≤ BV
DSS
,
starting
T
J
= 25
o
C.
4. Essentially independent of operating temperature.
©2000
Fairchild Semiconductor Corporation
FQD19N10L
Rev. C1
2
www.fairchildsemi.com
FQD19N10L
— N-Channel QFET
®
MOSFET
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Top :
10
1
150
℃
10
0
25
℃
-55
℃
※
Notes :
1. V
DS
= 30V
2. 250μ s Pulse Test
10
0
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
-1
10
10
0
10
1
10
-1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.30
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
V
GS
= 5V
0.18
I
DR
, Reverse Drain Current [A]
0.24
10
1
V
GS
= 10V
0.12
10
0
0.06
※
Note : T
J
= 25
℃
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0.00
0
15
30
45
60
75
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1800
V
GS
, Gate-Source Voltage [V]
1500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 50V
8
Capacitance [pF]
1200
V
DS
= 80V
C
iss
900
6
C
oss
600
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
C
rss
300
2
※
Note : I
D
= 19A
0
-1
10
10
0
10
1
0
0
5
10
15
20
25
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000
Fairchild Semiconductor Corporation
FQD19N10L
Rev. C1
3
www.fairchildsemi.com
FQD19N10L
— N-Channel QFET
®
MOSFET
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μA
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 7.8 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
16
Operation in This Area
is Limited by R
DS(on)
10
2
I
D
, Drain Current [A]
100
μ
s
10
1
1 ms
10 ms
DC
I
D
, Drain Current [A]
10
μ
s
12
8
10
0
※
Notes :
4
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Z
JC
(t), Thermal Response [
o
C/W]
10
0
D = 0 .5
0 .2
0 .1
0 .0 5
※
N o te s :
1 . Z
θ
J C
( t) = 2 .5
℃
/W M a x .
2 . D u ty F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
10
-1
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
,
R e c t a n g u l a r
P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000
Fairchild Semiconductor Corporation
FQD19N10L
Rev. C1
4
www.fairchildsemi.com
FQD19N10L
— N-Channel QFET
®
MOSFET
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
DUT
I
G
= const.
3mA
Q
gd
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 13. Resistive Switching Test Circuit & Waveforms
V
DS
I
D
R
G
V
GS
10V
GS
t
p
L
BV
DSS
I
AS
V
DD
DUT
V
DD
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
I
D
(t)
V
DS
(t)
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000
Fairchild Semiconductor Corporation
FQD19N10L
Rev. C1
5
www.fairchildsemi.com
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