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FHX45X

Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
CategoryDiscrete semiconductor    The transistor   
File Size342KB,4 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Environmental Compliance  
Download Datasheet Parametric View All

FHX45X Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

FHX45X Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSUMITOMO
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N
Reach Compliance Codeunknown
Other featuresLOW NOISE, HIGH RELIABILITY
ConfigurationSINGLE
Minimum drain-source breakdown voltage3.5 V
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandKU BAND
JESD-30 codeR-XUUC-N
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

FHX45X Preview

FHX45X
GaAs FET & HEMT Chips
FEATURES
Low Noise Figure: 0.55dB (Typ.)@f=12GHz
High Associated Gain: 12.0dB (Typ.)@f=12GHz
Lg
0.15µm, Wg = 280µm
Gold Gate Metallization for High Reliability
Gate
Drain
DESCRIPTION
The FHX45X is a Super High Electron Mobility Transistor
TM
(SuperHEMT ) intended for general purpose, ultra-low noise and high
gain amplifiers in the 2-18GHz frequency range. The device is well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna
stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.1 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Gate
Source
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
290
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
Rth
Condition
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10µA
Min.
10
45
-0.1
-3.0
Limit
Typ. Max.
40
65
-1.0
-
0.55
12.0
155
85
-
-2.0
-
0.65
-
200
Unit
mA
mS
V
V
dB
dB
°C/W
-
VDS = 2V, IDS = 10mA,
f = 12GHz
10.0
Channel to Case
-
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.2
July 1999
1
FHX45X
GaAs FET & HEMT Chips
POWER DERATING CURVE
350
Total Power Dissipation (W)
300
Drain Current (mA)
250
200
150
100
50
0
0
50
100
150
200
0
40
-0.2V
30
-0.4V
10
-0.6V
-0.8V
-1.0V
1
2
3
4
Drain-Source Voltage (V)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
50
VGS =0V
Ambient Temperature (°C)
NF & Gas vs. IDS
4
f=12GHz
VDS=2V
Gas
Associated Gain (dB)
3
Noise Figure (dB)
12
11
2
10
9
1
NF
8
7
20
30
14
13
Noise Figure (dB)
3
NF & Gas vs. Frequency
VDS=2V
IDS=10mA
15
Gas
2
10
1
NF
0
2
4 6 8 10 12 20
Frequency (GHz)
5
0
0
10
Drain Current (mA)
FHX45X NOISE PARAMETERS
VDS=2V, IDS=10mA
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
Γopt
(MAG) (ANG)
0.83
0.72
0.65
0.62
0.61
0.60
0.58
0.55
0.47
12.7
28.2
45.2
62.6
79.4
94.5
106.7
115.0
118.4
NFmin
(dB)
0.28
0.30
0.34
0.39
0.47
0.55
0.67
0.81
1.00
Rn/50
Ga (max) & |S21|2 vs. FREQUENCY
20
VDS=2V
IDS=10mA
15
Ga (max)
0.21
0.19
0.17
0.15
0.13
0.11
0.10
0.09
0.09
Gain (dB)
10
|S21|2
5
0
4
6
8 1012
20
Frequency (GHz)
2
Associated Gain (dB)
FHX45X
GaAs FET & HEMT Chips
+j50
+j25
+j100
S11
S22
+90°
S21
S12
+j250
+j10
1
5
18 GHz
10
5
15
10
18 GHz
1
0.04 0.08 0.12
0.1 GHZ
0.1 GHZ
1
0.16
0
10
25
18 GHz
15
50Ω
100
0.1 GHZ
1
1
0.1 GHZ
180°
SCALE FOR |S12|
18 GHz
15 10
10
5
5
SCALE FOR |S21|
-j10
-j250
2
3
4
5
-j25
-j50
-j100
-90°
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY
(MHZ)
100
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
MAG
1.000
0.998
0.991
0.966
0.928
0.883
0.835
0.788
0.744
0.705
0.671
0.642
0.618
0.599
0.584
0.573
0.566
0.561
0.560
0.562
S21
ANG
-1.4
-6.8
-13.6
-27.0
-39.9
-52.1
-63.6
-74.5
-84.8
-94.5
S12
ANG
178.9
174.4
168.8
157.8
147.4
137.7
128.8
120.5
112.9
105.8
99.3
93.2
87.5
82.1
77.0
72.1
67.4
62.9
58.5
54.3
S22
ANG
89.3
86.4
82.8
75.9
69.6
64.1
59.3
55.4
52.3
49.9
48.1
46.9
46.2
46.0
46.2
46.7
47.3
48.2
49.1
50.0
MAG
6.039
6.025
5.981
5.818
5.572
5.277
4.959
4.640
4.333
4.046
3.782
3.542
3.324
3.126
2.948
2.786
2.639
2.504
2.382
2.268
MAG
.002
.009
.017
.033
.048
.060
.070
.078
.085
.090
.094
.097
.100
.103
.106
.109
.112
.116
.120
.125
MAG
.533
.531
.528
.516
.497
.475
.452
.430
.408
.389
.372
.358
.346
.336
.329
.323
.319
.317
.317
.318
ANG
-0.9
-4.6
-9.2
-18.0
-26.4
-34.2
-41.4
-48.0
-54.0
-59.6
-64.9
-70.0
-74.9
-79.7
-84.4
-89.0
-93.7
-98.4
-103.1
-107.8
-103.8
-112.7
-121.1
-129.3
-137.1
-144.6
-151.7
-158.5
-165.1
-171.3
Gate
Drain
NOTE:*
The data includes bonding wires.
n: number of wires
n=2 (0.3mm length, 25µm Dia Au wire)
n=2 (0.3mm length, 25µm Dia Au wire)
Download S-Parameters, click here
Source n=4 (0.3mm length, 25µm Dia Au wire)
3
FHX45X
GaAs FET & HEMT Chips
CHIP OUTLINE
60
90
(Unit:
µm)
Drain
350±20
160
Source
70
50
100
450±20
Die Thickness:
100±20µm
4
75
Gate
Gate
65
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