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US35

Description
0.4 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size137KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

US35 Overview

0.4 A, SILICON, SIGNAL DIODE

US35 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)7 V
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current20 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.4 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3500 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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