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-1-
Revision 1.2
October 2006
K8C56(57)15ET(B)M
Document Title
NOR FLASH MEMORY
256M Bit (16M x16) Sync Burst , Multi Bank MLC NOR Flash Memory
Revision History
Revision No.
0.0
0.5
0.6
History
Initial
Preliminary
- Added Burst Access time(11ns@66Mhz, 9ns@83Mhz)
- Correct the Active Write Current (typ.15mA, max.30mA --> typ.25mA,
max.40mA)
- Correct tBDH(Data Hold Time from Next Clock Cycle) from
4ns(@66MHz), 2.25ns(@108MHz), 1.5ns(@133MHz) to
3ns(@66MHz), 2ns(@108MHz), 2ns(@133MHz)
- Correct tRDYA(Clock to RDY Setup Time) from 8ns(@83Mhz) to
9ns(@83MHz)
- Correct tRDYS(RDY setup to Clock) from 4ns(@66MHz),
2.25ns(@108MHz), 1.5ns(@133MHz) to 3ns(@66MHz),
2ns(@108MHz), 2ns(@133MHz)
- Correct typo
- Add Ordering Information for Density
56 : 256Mb for 66/83MHz, 57 : 267Mb for 108/133Mhz
- Add Product Classification Table (Table 1-1)
- Change tAVDH(AVD Hold Time from CLK) from 6ns(@66MHz),
5ns(@83MHz) to 2ns(@66/83MHz)
- Delete tOH(
Output Hold Time from Address, CE or OE ) from Asynchronous
Read parameter
Draft Date
April 1, 2005
September 1, 2005
November 7, 2005
Remark
Advance
Preliminary
Preliminary
0.7
December 7, 2005
Preliminary
0.8
- CFI note is added (Max Operation frequency : Data 53H is in 66/83Mhz
part
- tAVDO is deleted
- Specification is finalized
April 04,2006
Preliminary
1.0
April 25,2006
1.1
Active Asynchronous read Current(@1Mhz) is changed
September 08,2006
3mA(typ.),5mA(max.) to 8mA(typ.), 10mA(max.)
'In erase/program suspend followed by resume operation, min. 200ns is
needed for checking the busy status' is added
Frequency information is added to Programmable Wait State at Burst
Mode Configuration Register Table.
"Asynchronous mode may not support read following four sequential invalid
read condition within 200ns." is added
Correct typo
October 17, 2006
In write buffer programming part, "And from the third cycle to the last cycle
of Write to Buffer command is also required when using Write-Buffer-Pro-
gramming features in Unlock Bypass mode." is added.
1.2
-2-
Revision 1.2
October 2006
K8C56(57)15ET(B)M
Table of Contents
NOR FLASH MEMORY
FEATURES ...................................................................................................................................................................... 1
GENERAL DESCRIPTION ............................................................................................................................................... 1
ORDERING INFORMATION ............................................................................................................................................ 5
Continuous Linear Burst Read......................................................................................................................... 21
8-, 16-Word Linear Burst Read .................................................................................................................. 21
Programmable Wait State .......................................................................................................................... 22
Program ...................................................................................................................................................................... 24
Program Suspend / Resume....................................................................................................................................... 27
Read While Write Operation ....................................................................................................................................... 27
Deep Power Down ...................................................................................................................................................... 27
FLASH MEMORY STATUS FLAGS ................................................................................................................................. 29
DQ7 : Data Polling ...................................................................................................................................................... 29
ABSOLUTE MAXIMUM RATINGS ................................................................................................................................... 33
Revision 1.2
October 2006
-1-
K8C56(57)15ET(B)M
Table of Contents
NOR FLASH MEMORY
RECOMMENDED OPERATING CONDITIONS ( Voltage reference to GND ) ................................................................ 34
DC CHRACTERISTICS .................................................................................................................................................... 34
AC TEST CONDITION ..................................................................................................................................................... 35
AC CHARACTERISTICS................................................................................................................................................. 35
Crossing of First Word Boundary in Burst Read Mode..................................................................................................... 47
Case1 : Start from "16N" address group..................................................................................................................... 48
Case2 : Start from "16N+2" address group................................................................................................................. 48
Case3 : Start from "16N+3" address group................................................................................................................. 49
Case4 : Start from "16N+15" address group............................................................................................................... 49
Case5 : Start from "16N+15" address group............................................................................................................... 50
-2-
Revision 1.2
October 2006
K8C56(57)15ET(B)M
NOR FLASH MEMORY
256M Bit (16M x16) Synch Burst , Multi Bank MLC NOR Flash Memory
FEATURES
•
Single Voltage, 1.7V to 1.95V for Read and Write operations
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Embedded System
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