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IRGS4B60KPBF

Description
INSULATED GATE BIPOLAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size359KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRGS4B60KPBF Overview

INSULATED GATE BIPOLAR TRANSISTOR

IRGS4B60KPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Code_compli
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)89 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)63 W
Certification statusNot Qualified
Maximum rise time (tr)23 ns
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)199 ns
Nominal on time (ton)40 ns
Base Number Matches1
PD - 95643A
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free.
C
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
V
CES
= 600V
I
C
= 6.8A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 2.1V
TO-220
IRGB4B60KPbF
D
2
Pak
TO-262
IRGS4B60KPbF IRGSL4B60KPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
12
6.8
Units
V
A
c
24
24
±20
63
31
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
V
W
Gate-to-Emitter Voltage
Maximum Power Dissipation
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Weight
Junction-to-Ambient (PCB Mount, steady state)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
2.4
–––
62
40
–––
Units
°C/W
d
g
www.irf.com
1
11/18/04

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