SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US2AA THRU US2MA
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 2.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
C
D
F
G
MAX.
MIN.
MAX.
MIN.
A
.110(2.79)
.100(2.54)
E
.208(5.28)
.194(4.93)
B
.177(4.50)
.157(3.99)
F
.090(2.29)
.078(1.98)
H
C
D
.058(1.47) .012(0.305)
.052(1.32) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
2.0
(T
L
=90
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
50
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
1.0
1.4
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
350
(at rated DC blocking voltage)
T
a
=100 C
50
Maximum Reverse Recovery Time
(Note 1)
trr
25
C
J
Typical Junction Capacitance
(Note 2)
20
R
θ
(ja)
Typical Thermal Resistance
(Note 3)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
US2 US2 US2 US2 US2 US2 US2
UNITS
AA BA DA GA JA KA MA
50
100 200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100 200 400 600 800 1000
V
A
A
1.7
V
µA
µA
nS
pF
o
75
C/W
o
C
http://www.sse-diode.com
Embedded System
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