KSD13003ER/KSU13003ER
KSD13003ER/KSU13003ER
High Voltage Switch Mode Application
• High Voltage, High Speed Switching
• Suitable for Switching regulator, Inverters motor controls
• 150℃ Max. Operating temperature
• 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)
Absolute Maximum Ratings
CHARACTERISTICS
TC=25℃ unless otherwise noted
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
STG
T
J
RATING
700
400
9
1.5
3
0.75
25
-65~150
150
UNIT
V
V
V
A
A
A
W
℃
℃
1.5 Amperes
NPN Silicon Power Transistor
25 Watts
TO-252 / TO-251
1. Emitter
2. Collector
3. Base
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Storage Temperature
Max. Operating Junction Temperature
D-PAK
2
I-PAK
1
1
3
2
3
KSD13003ER KSU13003ER
Electrical Characteristics
CHARACTERISTICS
Collector-Base Breakdown Voltage
TC=25℃ unless otherwise noted
SYMBOL
V
CBO
V
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
Test Condition
I
C
=500μA, I
E
=0
I
C
=1mA, I
B
=0
V
EB
=9V,I
C
=0
V
CE
=10V,I
C
=400mA
V
CE
=10V,I
C
=1.5A
I
C
=0.5A,I
B
=0.1A
I
C
=1A,I
B
=0.25A
I
C
=1.5A,I
B
=0.5A
I
C
=0.5A,I
B
=0.1A
I
C
=1A,I
B
=0.25A
V
CB
=10V, f=0.1MHz
Min
700
400
Typ.
Max
Unit
V
V
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
10
9
3
38
0.5
1.0
3.0
1.0
1.2
21
4
1.1
4.0
0.7
㎂
V
V
V
V
V
㎊
㎒
㎲
㎲
㎲
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs,
Duty Cycle≤2%
V
BE
(sat)
C
ob
f
T
t
on
t
stg
t
F
V
CE
=10V,I
C
=0.1A
Vcc=125V, Ic=2A
I
B1
=0.2A, I
B2
= -0.2A
R
L
=125Ω
Note.
R
hFE1
Classification
O
Y
15 ~ 25
20 ~ 30
25 ~ 35
Package Mark information.
S
ER
13003
YWW Z
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎
SEMIHOW REV.A0,July 2011
KSD13003ER/KSU13003ER
Typical Characteristics
V
BE
(SAT), V
CE
(SAT), SATURATION VOLTAGE [V]
I
C
, COLLECTOR CURRENT [A]
h
FE
, DC CURRENT GAIN [A]
I
C
, COLLECTOR CURRENT [A]
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
P
C
, COLLECTOR POWER DISSIPATION [W]
30
25
20
15
10
5
0
C
ob
, CAPACITANCE [pF]
0
25
50
75
100
125
150
175
V
CB
, COLLECTOR-BASE VOLTAGE [V]
T
c
, CASE TEMPERATURE [℃]
Figure 3. Forward Biased
Safe Operating Area
Figure 4. Power Derating
◎
SEMIHOW REV.A0,July 2011
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
