KSC184
NPN EPITAXIAL SILICON TRANSISTOR
AM FREQUENCY CONVERTER
IF AMPLIFIER
•
Current Gain Bandwidth Product f
T
=100MHz (Typ)
•
Complement to KSA542
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
30
25
5
50
250
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
OB
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0
f=1MHz
Min
30
25
5
0.1
0.1
1000
0.2
4.4
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
40
0.1
100
2.6
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
Y
G
L
V
70-140 120-240 200-400 350-700 600-1000
Rev. B
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1999 Fairchild Semiconductor Corporation
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Formative or
In Design
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This datasheet contains the design specifications for
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