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2N3637E3

Description
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size169KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3637E3 Overview

Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

2N3637E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage175 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
LEVELS
2N3634
2N3634L
2N3634UB
2N3635
2N3635L
2N3635UB
2N3636
2N3636L
2N3636UB
2N3637
2N3637L
2N3637UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
UB:
@ T
A
= +25°C
@ T
C
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
**
T
J
, T
stg
2N3634*
2N3635*
140
140
5.0
1.0
1.0
5.0
1.5
-65 to +200
2N3636*
2N3637*
175
175
5.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
°C
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3634, 2N3635
2N3636, 2N3637
Collector-Base Cutoff Current
V
CB
= 100Vdc
V
CB
= 140Vdc
V
CB
= 175Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 5.0Vdc
Collector-Emitter cutoff Current
V
CE
= 100Vdc
V
(BR)CEO
140
175
100
10
10
50
10
10
Vdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
2N3634, 2N3635
2N3636, 2N3637
I
CBO
ηAdc
μAdc
μAdc
3 PIN
ηAdc
μAdc
μAdc
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
I
EBO
I
CEO
T4-LDS-0156 Rev. 2 (101452)
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