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2N2920E3

Description
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size288KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N2920E3 Overview

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN

2N2920E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionTO-78, 6 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)300
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /355
DEVICES
LEVELS
2N2919
2N2920
2N2919L
2N2920L
2N2919U
2N2920U
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
One
Section
1
Total Power Dissipation
@ T
A
= +25°C
P
T
T
J
, T
stg
200
Value
60
70
6.0
30
Both
Sections
2
350
mW
°C
TO-78
Unit
Vdc
Vdc
Vdc
mAdc
Operating & Storage Junction Temperature Range
-65 to +200
NOTES:
1. Derate linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate linearly 2.000mW/°C for T
A
> +25°C (both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc; Pulsed
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 70Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
Symbol
Min.
Max.
Unit
V
(BR)CEO
60
Vdc
U - Package
ηAdc
μAdc
ηAdc
μAdc
I
CBO
2.0
10
2.0
10
I
EBO
T4-LDS-0202 Rev. 1 (110638)
Page 1 of 4
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