TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /355
DEVICES
LEVELS
2N2919
2N2920
2N2919L
2N2920L
2N2919U
2N2920U
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
One
Section
1
Total Power Dissipation
@ T
A
= +25°C
P
T
T
J
, T
stg
200
Value
60
70
6.0
30
Both
Sections
2
350
mW
°C
TO-78
Unit
Vdc
Vdc
Vdc
mAdc
Operating & Storage Junction Temperature Range
-65 to +200
NOTES:
1. Derate linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate linearly 2.000mW/°C for T
A
> +25°C (both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc; Pulsed
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 70Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
Symbol
Min.
Max.
Unit
V
(BR)CEO
60
Vdc
U - Package
ηAdc
μAdc
ηAdc
μAdc
I
CBO
2.0
10
2.0
10
I
EBO
T4-LDS-0202 Rev. 1 (110638)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 100μAdc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100μAdc
Base-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100μAdc
Symbol
Min.
Max.
Unit
2N2919, 2N2919L , 2N2919U
h
FE
60
100
150
175
235
300
240
325
600
600
800
1000
2N2920, 2N2920L, 2N2920U
h
FE
V
CE(sat)
0.3
Vdc
V
BE(sat)
0.5
1.0
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio, Magnitude
I
C
= 0.5mAdc, V
CE
= 5.0Vdc, f = 20MHz
Small-Signal Short Circuit Input Impedance
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
Small-Signal Short Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Noise Figure
I
C
= 10μAdc, V
CE
= 5Vdc, f = 100Hz, R
G
= 10kΩ
I
C
= 10μAdc, V
CE
= 5Vdc, f = 1.0kHz, R
G
= 10kΩ
I
C
= 10μAdc, V
CE
= 5Vdc, f = 10kHz, R
G
= 10kΩ
F
1
F
2
F
3
5.0
3.0
3.0
dB
Symbol
|h
fe
|
Min.
3.0
Max.
20
Unit
h
je
3.0
30
kΩ
h
oe
C
obo
60
5.0
μmhos
pF
T4-LDS-0202 Rev. 1 (110638)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CD1
CH
HT
LC
LC1
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
DIMENSIONS
Inches
Millimeters
Min
Max
Min
Max
.335
.370
8.51
9.40
.305
.335
7.75
8.51
.140
.260
3.56
6.60
.009
.041
0.23
1.04
.140
.160
3.56
4.06
.200 TP
5.08 TP
.016
.021
.041
0.53
See notes 10, 11 and 12
.016
.019
.041
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.029
.045
0.74
1.14
.028
.034
0.71
0.86
.010
0.25
45°TP
45°TP
Notes
9
10
10
10
10
8
7
5, 6
4, 5
9
NOTES:
1
Dimensions are in inches.
2
Millimeters are given for general information only.
3
Tab Shown omitted.
4
Lead number 4 and 8 omitted on this variation.
5
Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm)
6
TL shall be measured from maximum CD.
7
Details of outline in this zone are optional.
8
CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
9
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedures described on gauge drawing GS-1.
10 LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
11 For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum.
12 For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm)
maximum.
13 In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1.
Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).
T4-LDS-0202 Rev. 1 (110638)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Symbol
BL
BL2
BW
BW2
CH
LH
LL1
LL2
LS1
LS2
LW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.240
.250
6.10
6.35
.250
6.35
.165
.175
4.19
4.44
.175
4.44
.044
.080
1.12
2.03
.026
.039
0.66
0.99
.060
.070
1.52
1.78
.082
.098
2.08
2.49
.095
.105
2.41
2.67
.045
.055
1.14
1.39
.022
.028
0.56
0.71
Pin no.
1
2
3
4
5
6
Transistor
Collector no. 1
Base no. 1
Base no. 2
Collector no. 2
Emitter no. 2
Emitter no. 1
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 In accordance with AMSE Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2.
Physical dimensions (2N2919U and 2N2920U) Surface mount.
T4-LDS-0202 Rev. 1 (110638)
Page 4 of 4
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