DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
US1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
2000 Feb 14
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating temperature
•
Ideal for surface mount automotive applications
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy absorption capability
•
UL 94V-O classified plastic package
•
Shipped in 12 mm embossed tape
•
Marking: cathode, date code, type code
•
Easy pick and place.
olumns
US1 series
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
cathode
band
k
a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
US1A
US1B
US1D
US1G
US1J
V
R
continuous reverse voltage
US1A
US1B
US1D
US1G
US1J
V
RMS
root mean square voltage
US1A
US1B
US1D
US1G
US1J
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
= 110
°C;
see Fig.2
−
−
−
−
−
−
35
70
140
280
420
1
V
V
V
V
V
A
−
−
−
−
−
50
100
200
400
600
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
50
100
200
400
600
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
2000 Feb 14
2
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
FSM
PARAMETER
non-repetitive peak forward current
CONDITIONS
t = 8.3 ms half sine wave;
T
j
= 25
°C
prior to surge;
V
R
= V
RRMmax
See Fig.3
−
MIN.
US1 series
MAX.
25
A
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
US1A to US1G
US1J
I
R
t
rr
C
d
reverse current
reverse recovery time
diode capacitance
US1A to US1G
US1J
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm.
For more
information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
27
100
150
UNIT
K/W
K/W
K/W
I
F
= 1 A;
see Fig.4
see Fig.5
V
R
= V
RRMmax
; see Figs 6 and 7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Figs 6 and 7
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.12
V
R
= 4 V; f = 1 MHz;
see Fig.8
see Fig.9
14
10
−
−
pF
pF
−
−
−
−
−
1.1
1.4
10
50
50
V
V
µA
µA
ns
CONDITIONS
TYP.
MAX.
UNIT
2000 Feb 14
3
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MCD822
US1 series
handbook, halfpage
2
handbook, halfpage
200
MBK455
IF(AV)
(A)
1.5
Tj
(°C)
1
100
0.5
0
0
40
80
120
160
200
Ttp (°C)
0
0
50
VR (%VRmax)
100
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Device mounted as shown in Fig.11.
Solid line: Al
2
O
3
printed-circuit board.
Dotted line: epoxy printed-circuit board.
Fig.3
Maximum permissible junction temperature
as a function of reverse voltage.
10
2
handbook, halfpage
IF
(A)
10
MCD792
10
2
handbook, halfpage
IF
(A)
MCD793
10
1
1
10
−1
10
−1
10
−2
10
−2
10
−3
0
1
2
VF (V)
3
10
−3
0
1
2
3
VF (V)
4
US1A to G
T
j
= 25
°C.
US1J
T
j
= 25
°C.
Fig.4
Forward current as a function of forward
voltage; typical values.
Fig.5
Forward current as a function of forward
voltage; typical values.
2000 Feb 14
4
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
US1 series
handbook, halfpage
10
2
MCD807
IR
handbook, halfpage
10
2
MCD806
(µA)
10
Tj = 165
°C
IR
(µA)
Tj = 165
°C
10
1
1
10
−1
10
−1
Tj = 25
°C
10
−2
Tj = 25
°C
10
−2
10
−3
0
20
40
60
80
100
VR (%VRmax)
10
−3
0
20
40
60
80
100
VR (%VRmax)
US1A to G
f = 1 MHz; T
j
= 25
°C.
US1J
f = 1 MHz; T
j
= 25
°C.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
10
2
handbook, halfpage
MCD798
10
2
handbook, halfpage
MCD797
Cd
(pF)
Cd
(pF)
10
10
1
10
−2
10
−1
1
10
VR (V)
10
2
1
10
−2
10
−1
1
10
VR (V)
10
2
US1 A to G
f = 1 MHz; T
j
= 25
°C.
US1J
f = 1 MHz; T
j
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
2000 Feb 14
5
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