EEWORLDEEWORLDEEWORLD

Part Number

Search

JANSF2N7426

Description
27 A, 200 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size122KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

JANSF2N7426 Overview

27 A, 200 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

JANSF2N7426 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, S-CSFM-P3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)27 A
Maximum drain-source on-resistance0.16 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-CSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)108 A
Certification statusNot Qualified
GuidelineMIL-19500/660
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93858
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level
IRHM9260
100K Rads (Si)
IRHM93260
300K Rads (Si)
R
DS(on)
0.160Ω
0.160Ω
IRHM9260
JANSR2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard
HEXFET
TECHNOLOGY
®
I
D
QPL Part Number
-27A JANSR2N7426
-27A JANSF2N7426
TO-254AA
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermatically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-27
-17
-108
250
2.0
±20
500
-27
25
-9.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
11/27/00

JANSF2N7426 Related Products

JANSF2N7426 IRHM93260
Description 27 A, 200 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA 27 A, 200 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Is it lead-free? Contains lead Contains lead
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (ID) 27 A 27 A
Maximum drain-source on-resistance 0.16 Ω 0.16 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code S-CSFM-P3 S-CSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 108 A 108 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Regarding coupling capacitors
Can electrolytic capacitors be used for C1 and C2 in the figure? Why do I feel that the input AC signal cannot be fully coupled? Can't electrolytic capacitors only be charged in the forward direction?...
sabertan Discrete Device
The entrepreneurial life of a distributor boss
Although we cannot change the system, nor can we necessarily change others, we can change ourselves, because no one can stop us from making progress. If we fail or get frustrated, we can only blame ou...
eeleader Talking about work
Using mind maps to learn AVR microcontrollers
[url=http://cache.ourdev.cn/bbs_upload800938/files_24/ourdev_523965.gif][/url][img]http://cache.ourdev.cn/bbs_upload800938/files_24/ourdev_523965.gif[/img]...
fjjwwb123456 Embedded System
Help with the design of series DC regulated power supply
[i=s]This post was last edited by paulhyde on 2014-9-15 09:42[/i] 1. Design of series DC regulated power supply Design requirements (1) Output DC voltage, continuously adjustable (3V~12V); (2) Output ...
clj2811 Electronics Design Contest
How to open ccs3.3 with ccs6.0
asm2000.exe experienced a segmentation fault while processing section .text file .. What should I do if this error occurs: Sad:...
柏兮落落 DSP and ARM Processors
Altera announced today that Audi's advanced driver assistance system (ADAS) has selected its SoC for mass production.
Altera Corporation (NASDAQ: ALTR) today announced that Audi has selected its SoC field-programmable gate array (FPGA) for mass production of its advanced driver assistance system (ADAS). Audi, a leade...
lelee007 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2131  600  2579  478  2230  43  13  52  10  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号