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934057826115

Description
68A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size178KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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934057826115 Overview

68A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4

934057826115 Parametric

Parameter NameAttribute value
package instructionPLASTIC, LFPAK-4
Reach Compliance Codeunknown
PH7030L
N-channel TrenchMOS logic level FET
Rev. 05 — 29 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC convertors
Notebook computers
Portable equipment
Switched-mode power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
30
68
62.5
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
150 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A;
V
DS
= 10 V; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C; see
Figure 9;
see
Figure 10
-
3.2
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
6.9
7.9
mΩ

934057826115 Related Products

934057826115 PH7030L,115 934057826118
Description 68A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 mosfet N-CH 30v 68a lfpak 68A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4
package instruction PLASTIC, LFPAK-4 PLASTIC, LFPAK-4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown unknown unknown
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 115 mJ 115 mJ
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 30 V 30 V
Maximum drain current (ID) - 68 A 68 A
Maximum drain-source on-resistance - 0.011 Ω 0.011 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - MO-235 MO-235
JESD-30 code - R-PSSO-G4 R-PSSO-G4
Number of components - 1 1
Number of terminals - 4 4
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 220 A 220 A
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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