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FH1N5822

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size81KB,2 Pages
ManufacturerFenghua (HK) Electronics Ltd.
Download Datasheet Parametric View All

FH1N5822 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

FH1N5822 Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeDO-214AA
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation1.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL

FH1N5822 Preview

广东肇庆风华新谷微电子有限公司
广东省肇庆市风华路
18
号风华电子工业城三号楼一楼
TEL:0758-2865088 2865091
FAX:0758-2849749
Schottky Diode (FH1N5822)
肖特基二极管
Features
特征:
·Ideal for surface mounted applications
·Low leakage current.
·For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
SMB(DO-214AA)
3.0Ampere Schottky Barrier Rectifiers
3.0
安培肖特基势垒整流二极管
Absolute Maximum Ratings*
最大绝对值
T
A
=
25℃ unless otherwise noted
Value
Unites
Symbol
符号
Parameter
参数
I
F(AV)
3.0
A
Average Rectified Current
平均整流电流
I
FSM
80
A
Non-repetitive Peak Forward Surge Current
无重复正
向峰值浪涌电流
8.3 ms single half-sine-wave
superimposed on rated load
P
D
1.25
W
Total Device Dissipation
总 耗 散 功 率
12.5
MW/℃
Derate above 25℃
R
θJA
20
Thermal Resistance, Junction to Ambient
热阻
℃/W
T
STG
-65 to +150
Storage Temperature Range
储存温度
T
J
-65 to +150
Operating Junction Temperature
工½结温
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Electrical Characteristics
T
A
=
25℃ unless otherwise noted
Symbol
Parameter
参数
符号
V
RRM
Maximum Peak Repetitive Reverse Voltage
最大峰值
反向电压
V
RMS
Maximum RMS Voltage
V
R
DC Reverse Voltage (Rated V
R
)反向电压
I
RM
Maximum Instantaneous Reverse Current
最大瞬间
反向电流
T
A
=
25℃@rated V
R
T
A=
100℃
V
FM
Maximum Instantaneous Forward Voltage
最大瞬间
正向电压
@1.0A
C
Typical Junction capacitance
典型结容
Value
40
28
40
0.5
10
500
300
Units
V
V
V
mA
mA
mV
pF
Page 0 of 2
*2005
年第
2
版*
All Rights Reserved
广东肇庆风华新谷微电子有限公司
广东省肇庆市风华路
18
号风华电子工业城三号楼一楼
TEL:0758-2865088 2865091
FAX:0758-2849749
DO-214AA
Dimensions in INCHES(MILLIMETERS)
DO-214AA
尺寸 英寸(毫米)
DO214-AA
Page 1 of 2
*2005
年第
2
版*
All Rights Reserved
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