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UZX5T949GTC

Description
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size119KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

UZX5T949GTC Overview

Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UZX5T949GTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
ZX5T949G
30V PNP LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BV
CEO
= -30V : R
SAT
= 31m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new 5
th
generation low saturation 30V
PNP transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
5.5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltages
Exceptional gain linearity down to 10mA
SOT223
APPLICATIONS
DC - DC Converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZX5T949GTA
ZX5T949GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
embossed
QUANTITY PER
REEL
1,000 units
4,000 units
PINOUT
DEVICE MARKING
X5T949
TOP VIEW
ISSUE 1 - NOVEMBER 2003
1
SEMICONDUCTORS

UZX5T949GTC Related Products

UZX5T949GTC UZX5T949GTA
Description Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified? conform to conform to
Parts packaging code SOT-223 SOT-223
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 5.5 A 5.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 110 MHz 110 MHz
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