HTP4A60S
HTP4A60S
4 Quadrants Sensitive TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V
R.M.S On–State Current (I
T(RMS)
= 4A)
Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
V
DRM
= 600 V
I
T(RMS)
= 4 A
I
TSM
= 33 A
I
GT
= 5mA/12mA
Symbol
TO-220
Applications
Heating control, Lighting control, Motor control such like dimmer,
sensor light, Humidifier, etc.
T1
T2
G
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
Absolute Maximum Ratings
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
P
GM
Parameter
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
Fusing Current
Forward Peak Gate Power
Dissipation
Forward Average Gate Power
Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
(T
J
=25℃ unless otherwise specified )
Conditions
Ratings
600
600
3.6
4
30/33
4.5
2
Unit
V
V
A
A
A
A
2
S
W
Sine wave, 50/60Hz, Gate open
Full sine wave, T
C
= 109.5
o
C
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
t = 10ms
T
J
= 125
°C
T
J
= 125
°C,
over any 20ms
T
J
= 125
°C,
pulse width
≤ 20us
T
J
= 125
°C,
pulse width
≤ 20us
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
0.2
1
6
-40~+125
-40~+150
W
A
V
o
C
o
C
◎
SEMIHOW REV.A1,March 2013
HTP4A60S
Electrical Characteristics
Symbol
I
DRM
Parameter
(T
J
=25℃ unless otherwise specified )
Conditions
V
D
= V
DRM
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=125
o
C
1+, 1-, 3-
Min
-
-
-
-
-
-
-
-
0.2
-
10
-
Typ
-
-
-
-
-
-
-
-
-
-
-
5
Max
50
5
50
5
5
12
1.5
2.0
-
1.6
-
-
Unit
uA
mA
uA
mA
mA
mA
V
V
V
V
V/us
mA
Repetitive Peak Off-State Current
I
RRM
Repetitive Peak Reverse Current
V
D
= V
DRM
I
GT
Gate Trigger Current
V
D
= 12V, R
L
=330Ω
3+
1+, 1-, 3-
V
GT
V
GD
V
TM
dv/dt
I
H
Gate Trigger Voltage
Non-Trigger Gate Voltage
1
Peak On-State Voltage
Critical Rate of Rise of Off-State
Voltage
Holding current
V
D
= 12V, R
L
=330Ω
3+
V
D
= 12V, R
L
=330Ω, T
J
=125
o
C
I
T
= 5.6A, I
G
= 20mA
V
D
= 2/3 V
DRM
, T
J
=125
o
C
I
T
= 0.2A
Notes :
1. Pulse Width
≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance
Thermal Resistance
Conditions
Junction to Case
Junction to Ambient
Min
Typ
Max
3.6
80
Unit
o
C/W
o
C/W
◎
SEMIHOW REV.A1,March 2013
HTP4A60S
Typical Characteristics
4
180
o
150
o
120
o
Maximum allowable case temperature, T
C
[
o
C]
5
130
125
30
o
60
o
Power dissipation, P
D
[W]
120
3
90
o
115
2
90
o
120
o
110
150
o
180
o
1
60
o
30
o
0
1
2
3
4
5
105
0
100
0
1
2
3
4
5
R.M.S. on state current, I
T(RMS)
[A]
R.M.S. on state current, I
T(RMS)
[A]
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
10
1
40
35
Gate voltage, V
G
[V]
25[
o
C]
I
+
GT3
P
G(AV)
(0.2W)
10
0
P
GM
(2W)
Surge on state current, I
TSM
[A]
30
25
60Hz
20
25[
o
C]
I
+
GT1
I
-
GT1
I
-
GT3
V
GD
10
-1
10
0
10
1
10
2
10
3
10
4
50Hz
15
10
5
0
10
0
10
1
10
2
Gate current, I
G
[mA]
Time[cycles]
Fig 3. Gate power characteristics
Fig 4. Surge on state current rating
(Non-repetitive)
2.5
2.5
2.0
2.0
X 100(%)
1.5
V
GT
(t
o
C)
X 100(%)
V
GT
(25
o
C)
1.5
I
GT
(25
o
C)
I
GT
(t
o
C)
1.0
I
+
GT1
I
-
GT1
I
-
GT3
I
+
GT3
1.0
V
+
GT1
V
-
GT1
V
+
GT3
V
-
GT3
0.5
0.5
0.0
-50
-25
0
25
50
75
100
125
150
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
J
[
o
C]
Junction temperature, T
J
[
o
C]
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Gate trigger voltage vs.
junction temperature
◎
SEMIHOW REV.A1,March 2013
HTP4A60S
Typical Characteristics
10
2
10
3
Instantaneous on state current, I
T
[A]
25
o
C
10
1
125
o
C
Thermal impedance [
o
C/W]
10
2
10
0
10
1
R
S
=0.078Ω
V
TO
=0.85V
10
-1
0
1
2
3
4
5
10
0
10
-2
10
-1
10
0
10
1
Instantaneous on state voltage, V
T
[V]
Pulse Time [sec]
Fig 7. Instantaneous on state current vs.
Instantaneous on state voltage
Fig 8. Thermal Impedance vs. pulse time
Measurement of gate trigger current
R
L
V
DD
R
L
R
L
V
DD
V
DD
R
L
V
DD
R
G
V
G
(1) Quadrant I
R
G
V
G
(2) Quadrant II
R
G
V
G
(3) Quadrant III
R
G
V
G
(4) Quadrant IV
Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
◎
SEMIHOW REV.A1,March 2013
HTP4A60S
Package Dimension
TO-220 (A)
9.90
±0.20
0
.6
φ3
±0
.2
0
4.50
±0.20
1.30
±0.20
15.70
±0.20
2.80
±0.20
9.19
±0.20
6.50
±0.20
13.08
±0.20
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
3.02
±0.20
1.27
1.52
±0.20
2.40
±0.20
±0.20
◎
SEMIHOW REV.A1,March 2013
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