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TN5131

Description
RF AMPLIFIER MODEL
CategoryWireless rf/communication    Radio frequency and microwave   
File Size76KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric Compare View All

TN5131 Overview

RF AMPLIFIER MODEL

TN5131 Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionSM3, 4 PIN
Reach Compliance Codecompli
Other featuresI/P POWER-MAX (PEAK)=27DBM
structureCOMPONENT
Gain17 dB
Maximum input power (CW)13 dBm
Maximum operating frequency1300 MHz
Minimum operating frequency5 MHz
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum voltage standing wave ratio2
RF AMPLIFIER
MODEL
TM5131
Features
n
Gain: 18 dB Typical
n
Operating Temp. - 55 ºC
to +85
ºC
n
Environmental Screening Available
Available as:
TM5131, 4 Pin TO-8 (T4)
TN5131, 4 Pin Surface Mount (SM3)
FP5131, 4 Pin Flatpack (FP4)
BX5131, Connectorized Housing (H1)
Typical Intermodulation Performance at 25 º C
Second Order Harmonic Intercept Point........+46 dBm (Typ.)
Second Order Two Tone Intercept Point.........+40 dBm (Typ.)
Third Order Two Tone Intercept Point.............+20 dBm (Typ.)
Specifications
CHARACTERISTIC
Frequency
Gain (dB)
Power @ 1 dB
Comp. (dBm)
Reverse
Isolation (dB)
VSWR
In
Out
TYPICAL
Ta= 25 ºC
5-1300 MHz
18
>+7.5
<-29
<1.5:1
<1.6:1
<5
+15
40
MIN/MAX
Ta = -55 ºC to +85 ºC
5-1300 MHz
17.0 Min.
+6.0Min.
-27 Max.
2.0:1 Max.
2.0:1 Max.
5.5 Max.
+15
44 Max.
Maximum Ratings
Ambient Operating Temperature .............. -55ºC to + 100 ºC
Storage Temperature ............................... -62ºC to + 125 ºC
Case Temperature ................................................. + 125 ºC
DC Voltage ......................................................... + 18 Volts
Continuous RF Input Power ................................. + 13 dBm
Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)
Maximum Peak Power .................... 0.5 Watt (3
µsec
Max.)
Noise Figure (dB)
Power
Vdc
mA
Note: Care should always be taken to effectively ground the case of each unit.
Typical Performance Data
20
19
18
17
16
Start 5 MHz
Stop 1300 MHz
Gain (dB)
0
- 10
- 20
- 30
- 40
Reverse Isolation (dB)
6
5
4
3
2
Start 5 MHz
Stop 1300 MHz
Start 5 MHz
Noise Figure (dB)
Stop 1300 MHz
+10
+ 9
+ 8
+ 7
+ 6
Start 5 MHz
1 dB Comp (dBm)
2.0
1.5
1.0
Stop 1300 MHz
Start 5 MHz
Input VSWR
2.0
1.5
1.0
Stop 1300 MHz
Start 5 MHz
Output VSWR
Stop 1300 MHz
Legend
+ 25 ºC
+ 85 ºC - - - - - - -55 ºC
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532
6/16/04
www.spectrummicrowave.com
Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN5131 Related Products

TN5131 BX5131 FP5131 TM5131
Description RF AMPLIFIER MODEL RF AMPLIFIER MODEL RF AMPLIFIER MODEL RF AMPLIFIER MODEL
Maker API Technologies API Technologies API Technologies API Technologies
Reach Compliance Code compli compliant compli compli
Other features I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM I/P POWER-MAX (PEAK)=27DBM
structure COMPONENT COAXIAL COMPONENT COMPONENT
Gain 17 dB 17 dB 17 dB 17 dB
Maximum input power (CW) 13 dBm 13 dBm 13 dBm 13 dBm
Maximum operating frequency 1300 MHz 1300 MHz 1300 MHz 1300 MHz
Minimum operating frequency 5 MHz 5 MHz 5 MHz 5 MHz
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
Maximum voltage standing wave ratio 2 2 2 2
package instruction SM3, 4 PIN - FP-4 T4, TO-8, 4 PIN
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