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HCD7NE70S

Description
700V N-Channel Super Junction MOSFET
File Size194KB,7 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
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HCD7NE70S Overview

700V N-Channel Super Junction MOSFET

HCD7NE70S
Dec 2013
BV
DSS
= 700 V
HCD7NE70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.95
100% Avalanche Tested
GS
=10V
R
DS(on) typ
= 0.95
I
D
= 6.0 A
D-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
700
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
W
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
Static
)
)
6.0
3.8
15.6
20
30
40
1.2
0.1
50
2.1
28
-55 to +150
300
(Note 1)
AC (f>1 Hz)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25
Power Dissipation (T
C
= 25
)*
)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient*
Soldering temperature, wave soldering
only allowed at leads
Typ.
--
--
--
Max.
4.4
60.5
260
Units
/W
T
sold
* When mounted on the minimum pad size recommended (PCB Mount)
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