HIH30N60BP
Dec 2013
V
CES
= 600 V
HIH30N60BP
600V PT IGBT
FEATURES
Low V
CE(sat)
Maximum Junction Temperature 150
Short Circuit Withstand Time 5
Designed for Operation Between 1-20KHz
Very tight Parameter Distribution
High Ruggedness, Temperature stable behavior
I
C
= 30 A
V
CE(sat) typ
= 2.2 V
TO-3P
G
C
E
Absolute Maximum Ratings
Symbol
V
CES
I
C
I
CM
I
F
I
FM
V
GES
t
SC
P
D
T
J
T
STG
T
L
Collector Current
Collector Current
Collector Current
Parameter
Collector-Emitter Voltage
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
)
)
Value
600
60
30
90
60
30
90
20
5
208
-40 to +150
-55 to +150
260
W
Units
V
A
A
A
A
A
A
V
(Note 1)
Diode Forward Current – Continuous (T
C
= 25
Diode Forward Current – Continuous (T
C
= 100
Diode Current
Gate-Emitter Voltage
Short circuit withstand time
(V
GE
=15V, V
CC
=400V, T
C
=150
)
Power Dissipation (T
C
= 25
Storage Temperature Range
)
Operating Temperature Range
– Pulsed
(Note 1)
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R
R
R
JC
(IGBT)
JC
(Diode)
JA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
--
Max.
0.6
0.9
40
Units
/W
HIH30N60BP
Package Marking and Odering Information
Device Marking
HIH30N60BP
HIH30N60BP
Week Marking
YWWX
YWWXg
Package
TO-3P
TO-3P
Packing
Tube
Tube
Quantity
30
30
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics of the IGBT
T
C
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GE(th)
V
CE(sat)
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE
= V
GE
, I
C
= 1.2 mA
V
GE
= 15 V,
I
C
= 30 A
T
C
= 25
T
C
= 125
4.4
--
--
5.7
2.2
2.2
6.6
2.6
2.7
V
V
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown
Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
V
GE
= 0 V, I
C
= 1 mA
V
CE
= 600 V, V
GE
= 0 V
V
GE
=
20 V, V
CE
= 0 V
600
--
--
--
--
--
--
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25 V, V
GE
= 0 V,
f = 1.0 MHz
--
--
--
1044
143
53
--
--
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
L
E
I
C(SC)
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Internal Emitter Inductance
Short Circuit Collector Current
V
CC
= 400 V, t
SC
5s,
V
GE
= 15V, T
C
= 25
V
CC
= 480V, I
C
= 30 A,
V
GE
= 15 V
V
CC
= 300 V, I
C
= 30 A,
R
G
= 20
GE
= -10/15V
Inductive load, T
C
= 125
V
CC
= 300 V, I
C
= 30 A,
R
G
= 20
GE
= -10/15V
Inductive load, T
C
= 25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
57
81
139
152
0.87
1.02
1.89
52
86
148
334
1.02
1.72
2.74
104
13
180
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
mJ
mJ
mJ
nC
nH
A
mJ
mJ
mJ
HIH30N60BP
Electrical Characteristics of the Diode
V
FM
t
rr
I
rr
Q
rr
di
rr
/dt
E
rec
t
rr
I
rr
Q
rr
di
rr
/dt
E
rec
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Diode Peak rate of fall of Reverse
Recovery Current during t
b
Diode Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Diode Peak rate of fall of Reverse
Recovery Current during t
b
Diode Reverse Recovery Energy
I
F
= 30 A, V
R
= 300 V
di
F
/dt = 200 A/ , T
C
= 125
I
F
= 30 A, V
R
= 300 V
di
F
/dt = 200 A/ , T
C
= 25
I
F
= 30 A,
V
GE
= 0 V
T
C
= 25
T
C
= 125
--
--
--
--
--
--
--
--
--
--
--
--
2.3
1.9
167
15
0.88
96
0.17
335
30
1.43
90
0.35
--
--
--
--
--
--
--
--
--
--
--
--
A/
mJ
A
A/
mJ
A
V
HIH30N60BP
Typical Characteristics
HIH30N60BP
Typical Characteristics
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