DISCRETE SEMICONDUCTORS
DATA SHEET
BLF542
UHF power MOS transistor
Product specification
October 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Gold metallization
•
Good thermal stability
•
Withstands full load mismatch
•
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the UHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT171 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT171
PIN
1
2
3
4
5
6
DESCRIPTION
source
source
gate
drain
source
source
WARNING
Product and environmental safety - toxic materials
1
3
5
2
4
6
g
MBB072
BLF542
PIN CONFIGURATION
halfpage
d
s
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C
in a common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
V
DS
(V)
28
P
L
(W)
5
G
P
(dB)
>
13
η
D
(%)
>
50
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF542
MAX.
65
20
1.5
20
150
200
UNIT
V
V
A
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
THERMAL RESISTANCE
8.8 K/W
0.4 K/W
handbook, halfpage
10
MRA735
handbook, halfpage
P
ID
(A)
35
tot
(W)
30
25
MRA734
1
(1)
(2)
(2)
20
15
10
−1
10
5
10
−2
0
10
(1)
1
10
VDS (V)
10
2
30
50
70
90
110
130
Th (
o
C)
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°C.
(1) Continuous operation.
(2) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 0.1 mA; V
GS
= 0
V
GS
= 0; V
DS
= 28 V
±V
GS
= 20 V; V
DS
= 0
I
D
= 10 mA; V
DS
= 10 V
I
D
= 0.3 A; V
DS
= 10 V
I
D
= 0.3 A; V
GS
= 15 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
2
160
−
−
−
−
−
BLF542
TYP. MAX. UNIT
−
−
−
−
240
3.3
1.4
14
9.4
1.7
−
10
1
4.5
−
5
−
−
−
−
V
µA
µA
V
mS
Ω
A
pF
pF
pF
handbook, halfpage
4
MBB777
handbook, halfpage
1.5
ID
(A)
MBB759
T.C.
(mV/K)
2
1
0
0.5
–2
–4
0
100
200
ID (mA)
300
0
0
5
10
VGS (V)
15
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5
Drain current as a function of gate-source
voltage, typical values.
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
handbook, halfpage
6
MBB778
handbook, halfpage
30
MBB776
RDS (on)
(Ω)
C
(pF)
4
20
Cis
Cos
2
10
0
0
50
100
Tj (
o
C)
150
0
0
10
20
VDS (V)
30
I
D
= 0.3 A; V
GS
= 15 V
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-resistance as a function of
junction temperature, typical values.
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, halfpage
6
MBB775
Crs
(pF)
4
2
0
0
10
20
VDS (V)
30
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
October 1992
5
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