FP6583 datasheet, PDF - EEWORLD Datasheet

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FP6583: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size69KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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FP6583 Overview

RF AMPLIFIER MODEL

FP6583 Parametric

Parameter Name	Attribute value
Maker	API Technologies
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	28 dB
Maximum input power (CW)	6 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6583

Features

High Gain: 30 dB Typical

Low Power Drain: 65 mW @ 5 Volts

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6583, 4 Pin TO-8 (T4)

TN6583, 4 Pin Surface Mount (SM3)

FP6583, 4 Pin Flatpack (FP4)

BX6583, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +19 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +13 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +10 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

Out

Noise figure (dB)

Power

Vdc

VSWR

TYPICAL

Ta= 25 ºC

10 - 500 MHz

-1

-37.5

1.5:1

<2.3

MIN/MAX

Ta = -55 ºC to +85 ºC

10 - 500 MHz

28.0 Min.

-4 Min.

-36 Max.

2.0:1 Max.

3.0 Max.

16 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 10 Volts

Continuous RF Input Power .................................... +6 dBm

Short Term RF Input Power...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power ................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 10 MHz

Stop 500 MHz

Gain (dB)

- 15

- 30

- 45

- 60

Reverse Isolation (dB)

Start 10 MHz

Stop 500 MHz

Noise Figure (dB)

Start 10 MHz

Stop 500 MHz

- 1

- 2

- 3

- 4

1 dB Comp. (dBm)

2.0

1.5

1.0

Input VSWR

2.0

1.5

1.0

Output VSWR

Start 10 MHz

Stop 500 MHz

Start 10 MHz

Stop 500 MHz

Start 10 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

11/16/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

FP6583 Related Products

	FP6583	BX6583	TM6583	TN6583
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Reach Compliance Code	compli	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	28 dB	28 dB	28 dB	28 dB
Maximum input power (CW)	6 dBm	6 dBm	6 dBm	6 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz	500 MHz
Minimum operating frequency	10 MHz	10 MHz	10 MHz	10 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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