CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 12A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 10Ω,
L = 500µH,
Test Circuit (Figure 24)
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= 600V
I
C
= 12A,
V
GE
= 15V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
-
-
-
-
-
-
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
2.0
1.6
5.6
-
-
8
78
97
17
8
96
18
55
160
50
17
16
110
70
55
250
175
MAX
-
250
2.0
2.7
2.0
-
±250
-
-
96
120
-
-
-
-
-
-
-
-
-
170
95
-
350
285
UNITS
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V,
L = 100µH, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10Ω,
L = 500µH,
Test Circuit (Figure 24)
2-2
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications
PARAMETER
Diode Forward Voltage
Diode Reverse Recovery Time
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
V
EC
t
rr
R
θJC
TEST CONDITIONS
I
EC
= 12A
I
EC
= 12A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
Thermal Resistance Junction To Case
IGBT
Diode
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
MIN
-
-
-
-
-
TYP
2.2
30
18
-
-
MAX
-
-
-
0.75
2.0
UNITS
V
ns
ns
o
C/W
o
C/W
Typical Performance Curves
60
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
30
20
10
0
0
V
GE
= 15V,
50
40
30
20
10
0
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 200µH
25
50
75
100
125
150
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
20
18
16
14
12
10
8
6
4
2
0
9
f
MAX
, OPERATING FREQUENCY (kHz)
300
T
C
75
o
C
V
GE
15V
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
300
275
250
I
SC
225
200
175
150
t
SC
125
100
75
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 10Ω, L = 500µH, V
CE
= 390V
10
1
3
10
20
30
10
11
12
13
14
15
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
2-3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
500
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
20
16
T
J
= 150
o
C
12
T
J
= 125
o
C
8
4
0
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250
µ
s
24
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
20
16
12
8
4
0
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
0
0.5
1.0
1.5
2
2.5
0
0.5
1.0
1.5
2
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
E
ON2
, TURN-ON ENERGY LOSS (µJ)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
600
500
400
300
200
100
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
400
R
G
= 10Ω, L = 500µH, V
CE
= 390V
350
300
250
200
150
100
50
0
2
4
6
8
10
12
T
J
= 25
o
C, V
GE
= 12V OR 15V
14
16
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V OR 15V
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
17
t
rI
, RISE TIME (ns)
16
15
14
13
12
11
10
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
32
28
24
20
16
12
8
4
0
2
R
G
= 10Ω, L = 500µH, V
CE
= 390V
T
J
= 125
o
C OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
2-4
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
115
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
110
105
100
95
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
90
85
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
80
70
60
50
40
30
20
10
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
4
6
8
10
12
14
16
18
20
22
24
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
90
R
G
= 10Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
250
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 25Ω, T
C
= 25
o
C
200
V
CE
= 600V
150
V
CE
= 400V
100
V
CE
= 200V
50
0
6
7
8
9
10
11
12
13
14
15
16
10
20
30
40
50
60
70
80
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
1.2
1.0
E
TOTAL
, TOTAL SWITCHING
ENERGY LOSS (mJ)
0.8
R
G
= 10Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
I
CE
= 24A
0.6
0.4
I
CE
= 12A
0.2
I
CE
= 6A
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
E
TOTAL
, TOTAL SWITCHING
ENERGY LOSS (mJ)
T
J
= 125
o
C, L = 500µH,
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 24A
1
I
CE
= 12A
I
CE
= 6A
0.1
5
10
100
R
G
, GATE RESISTANCE (Ω)
1000
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Dear experts, I am using msp430f149 for online program upgrade in my current project. I have tried the online upgrade function of stm32f4 before, but never the online upgrade of 430. If any experts ca...
Phenomenon: 1. The stack is almost full just after the program is loaded and not yet run. I just downloaded the program and it has not yet run, but it prompts that the stack is about to overflow: Wed ...
I'd like to ask here, which ARM development board is better now? I want to buy one to see for myself, is there any expert who can give me some advice? The price should not be higher than 3000......
I want to make a 1-20s graded delay, msp430g2553, external crystal oscillator 32768, and the TA counter overflow time is 2s. The question is how to use this 2s as a delay; I use the while(TAIFG==0); s...
Assume that data is read from 8-bit AD (if it is a higher-bit AD, the data type can be defined as int), the subroutine is get_ad();
1. Limited secondary filtering
/* A value can be adjust...[Details]
introduction
Since the beginning of the 21st century, the world of information has changed rapidly. Maybe a high-tech product will be released today and a better similar product will be releas...[Details]
As a wireless broadband metropolitan area network standard, WiMAX technology has greater advantages than previous 3.5GHz MMDS products in terms of non-line-of-sight transmission and spectrum utiliz...[Details]
Floating-point digital signal processing has become a constant requirement for precision technology, often in applications requiring high accuracy in areas such as aviation, industrial machinery, a...[Details]
1 Introduction
Solar street lights are mainly composed of four parts: solar photovoltaic cell components, batteries, charge and discharge controllers, and lighting fixtures. The bo...[Details]
1. Background:
The instrument system parameter detection and control of the chemical production workshop of Tangshan Coal Gas Coking Plant are all analog instruments, some of which are eve...[Details]
Overview
In spectral measurement, photomultiplier tubes (PMT) and charge-coupled devices (CCD) are often used as photoelectric converters. PMT is used in slow-changing, high-precision spectral...[Details]
At very low temperatures, certain metals and alloys lose their resistance to electric
current
and become
superconductors
. Two parameters that are often measured are the transition ...[Details]
introduction
LEDs continue to gain popularity in automotive applications, thanks to their long lifespan and the flexibility they offer for body styling and interior design. Some may be surpris...[Details]
The emergence and development of street lamps are inseparable from the prosperity and progress of cities, which makes street lamps useful. Conversely, street lamps also make the night of the city n...[Details]
Dual Tone MultiFrequency (DTMF) signaling is gradually being used in push-button telephones around the world. It quickly replaced the dial pulse signaling used in traditional rotary phones because ...[Details]
The principles to be followed are as follows:
(1) In terms of component layout, related components should be placed as close as possible. For example, clock generators, crystal oscillat...[Details]
Abstract: Based on the analysis of the characteristics of the IRIG-B (DC) code type, a design method for IRIG-B (DC) time code decoding is proposed. This method consists of a small number of periph...[Details]
Traditional synthesis techniques are increasingly unable to meet the needs of today's very large and complex FPGA designs implemented in 90nm and below process nodes. The problem is that traditio...[Details]
The battery and its management system are one of the key technologies of electric vehicles. In the past few years, most companies have encountered embarrassment in the development of electric vehic...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
