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APT10SC60KCT

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size67KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT10SC60KCT Overview

Rectifier Diode

APT10SC60KCT Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-220AB
Contacts3
Reach Compliance Codecompliant

APT10SC60KCT Preview

1
3
TO-220
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
1
3
2
APT10SC60KCT 600V 2X10A
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE
PRODUCT APPLICATIONS
PFC And Forward Topologies
Hard Or Soft Switched
Topologies
PRODUCT FEATURES
Schottky Barrier
Majority Carrier Only
Wide Energy Gap
High Breakdown Electric
Field
High Thermal Conductivity
High Pulse Capability
Positive Vf Temp Coefficient
Low Forward Voltage
No dv/dt Limitation
Popular TO-220 Package
PRODUCT BENEFITS
Switching Losses Nearly
Eliminated
zero recovery
TM
Greatly Reduced Turn On Loss
Improved Overall Efficiency
Enables Higher Freq. Operation
Simplify Or Eliminate Snubber
Circuits
High Temperature Operation
Low Leakage Current
Radiation Hardness
High Power Density
Thermally Stable Paralleling
High Frequency
High Performance
MAXIMUM RATINGS
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
P
TOT
T
J
,T
STG
T
L
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
All Ratings Are Per Leg: T
C
= 25°C unless otherwise specified.
APT10SC60KCT
UNIT
600
Volts
Maximum Average Forward Current (
T
C
=130°C, Duty Cycle = 0.5
)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (
T
J
=
25°C,
t
p
=
10µs
)
Power Dissipation (
T
C
= 25°C
)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
10
19
250
136
-55 to 175
300
Watts
°C
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
F
= 10A, T
J
= 25°C
V
F
Forward Voltage
I
F
= 20A, T
J
= 25°C
I
F
= 10A, T
J
= 175°C
I
RM
Maximum Reverse Leakage Current
V
R
= V
R
Rated, T
J
= 25°C
V
R
= V
R
Rated, T
J
= 175°C
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
UNIT
1.6
2.4
2.0
1.8
Volts
2.4
200
1000
µA
12-2003
050-7508 Rev A
zero recovery
TM
, is a Trademark of CREE INC.
DYNAMIC CHARACTERISTICS
Symbol
C
Q
C
t
fr
t
rr
dv
/
dt
APT10SC60KCT
MIN
-
TYP
MAX
UNIT
pF
nC
ns
V/ns
Characteristic / Test Conditions
Capacitance (V
R
= 400V, T
C
= 25°C, F = 1 MHz)
Total Capacitive Charge (V
R
= 600V, I
F
= 20A, di
F
/dt = 500A/µs, T
C
= 25°C)
Forward Recovery Time
Reverse Recovery Time
1
1
50
28
N/A
N/A
-
Peak Diode Recovery (V
R
= 480V, di/dt = 1000A/µs, T
C
= 25°C)
50
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
W
T
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
MIN
TYP
MAX
UNIT
°C/W
1.1
80
0.07
oz
g
Package Weight
1.9
10
Maximum Mounting Torque
lb•in
N•m
Torque
1.1
1
As a majority carrier device, there is no reverse recovery charge.
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.20
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
1.10
0.9
0.80
0.60
0.7
0.5
Note:
PDM
t1
t2
0.40
0.3
0.20
0
10
-5
0.1
0.05
10
-4
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
12-2003
0.688
°C/W
Power
(watts)
0.412
°C/W
Case temperature (°C)
0.00215 J/°C
050-7508 Rev A
0.0572 J/°C
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
60
T
J
= -55°C
50
I
F
, FORWARD CURRENT
(A)
I
r
, REVERSE CURRENT
(µA)
APT10SC60KCT
200
160
T
J
= 25°C
120
T
J
= 75°C
T
J
= 125°C
80
T
J
= 175°C
40
T
J
= 25°C
30
T
J
= 75°C
20
T
J
= 125°C
10
0
T
J
= 175°C
40
1
2
3
4
5
6
7
8
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current
vs.
Forward Voltage
0
0
200
400
600
800
V
R
, CATHODE-TO-ANODE VOLTAGE (V)
Figure 3. Reverse Current
vs.
Reverse Voltage
T
J
= 25°C
V
R
= 400V
0
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 4. Current Derating
175
C
J
, JUNCTION CAPACITANCE
(pF)
I
F
, (AV) FORWARD CURRENT
(A)
600
500
400
300
200
100
0
1
10
100
400
V
R
, REVERSE VOLTAGE (V)
Figure 5. Junction Capacitance
vs.
Reverse Voltage
.3
TO-220 Package Outline
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
16.51 (.650)
14.23 (.560)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
1.39 (.055)
0.51 (.020)
Cathode
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
Cathode
Anode
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7508 Rev A
12-2003
0.50 (.020)
0.41 (.016)
Anode

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