TN6576 datasheet, PDF - EEWORLD Datasheet

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TN6576: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size65KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TN6576 Overview

RF AMPLIFIER MODEL

TN6576 Parametric

Parameter Name	Attribute value
Maker	API Technologies
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	26 dB
Maximum input power (CW)	6 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	5 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6576

Features

High Gain: 28 dB Typical

Output Power: +16 dBm Typical

Available as:

TM6576, 4 Pin TO-8 (T4)

TN6576, 4 Pin Surface Mount (SM3)

FP6576, 4 Pin Flatpack (FP4)

BX6576, Connectorized Housing (H1)

RN6576, 4 Pin Surface Mount (SM19)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point........+56 dBm (Typ.)

Second Order Two Tone Intercept Point.........+52 dBm (Typ.)

Third Order Two Tone Intercept Point.............+30 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

Noise figure (dB)

Power

Vdc

TYPICAL

Ta= 25 ºC

5 - 500 MHz

+16

-34

<1.5:1

5.0

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

5 - 500 MHz

26.0 Min.

+14 Min.

-33 Max.

2.0:1 Max.

6.0 Max.

+15

68 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................... + 6 dBm

Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 5 MHz

Stop 500 MHz

Gain (dB)

- 10

- 20

- 30

- 40

Reverse Isolation (dB)

Start 5 MHz

Stop 500 MHz

Noise Figure (dB)

Start 5 MHz

Stop 500 MHz

+20

+18

+16

+14

+12

1 dB Comp. (dBm)

2.0

1.5

1.0

Input VSWR

Output VSWR

2.0

1.5

1.0

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

10/19/06

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN6576 Related Products

	TN6576	BUK9Y7R2-60E_15	FP6576	RN6576	TM6576
Description	RF AMPLIFIER MODEL	N-channel 60 V, 7.2 m logic level MOSFET in LFPAK56	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	-	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	-	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	-	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	-	COMPONENT	COMPONENT	COMPONENT
Gain	26 dB	-	26 dB	26 dB	26 dB
Maximum input power (CW)	6 dBm	-	6 dBm	6 dBm	6 dBm
Maximum operating frequency	500 MHz	-	500 MHz	500 MHz	500 MHz
Minimum operating frequency	5 MHz	-	5 MHz	5 MHz	5 MHz
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	-	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	-	2	2	2

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