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SIHD2N80AE-GE3

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size140KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHD2N80AE-GE3 Overview

Power Field-Effect Transistor,

SIHD2N80AE-GE3 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Factory Lead Time12 weeks
Base Number Matches1
SiHD2N80AE
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
D
FEATURES
• Low figure-of-merit (FOM) R
on
x Q
g
• Low effective capacitance (C
iss
)
• Reduced switching and conduction losses
DPAK (TO-252)
D
G
S
G
S
N-Channel MOSFET
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Integrated Zener diode ESD protection
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
typ. () at 25 °C
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
10.5
3
2
Single
850
2.5
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
DPAK (TO-252)
SiHD2N80AE-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current
a
Linear derating factor
Single pulse avalanche
energy
b
E
AS
P
D
T
J
, T
stg
T
J
= 125 °C
For 10 s
dv/dt
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt
d
Soldering recommendations (peak temperature)
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 1 A
c. 1.6 mm from case
d. I
SD
I
D
, di/dt = 100 A/μs, starting T
J
= 25 °C
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92238
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
800
± 30
2.9
1.8
3.6
0.5
14.1
62.5
-55 to +150
70
0.1
260
W/°C
mJ
W
°C
V/ns
°C
A
UNIT
V
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