EDO DRAM Module, 8MX72, 60ns, CMOS
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | , |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE WITH EDO |
| Maximum access time | 60 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-XDMA-N168 |
| memory density | 603979776 bit |
| Memory IC Type | EDO DRAM MODULE |
| memory width | 72 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8MX72 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| KMM374F800CK-6 | KMM374F810CK-7 | KMM374F810CK-6 | KMM374F800CK-7 | |
|---|---|---|---|---|
| Description | EDO DRAM Module, 8MX72, 60ns, CMOS | EDO DRAM Module, 8MX72, 70ns, CMOS | EDO DRAM Module, 8MX72, 60ns, CMOS | EDO DRAM Module, 8MX72, 70ns, CMOS |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| Maximum access time | 60 ns | 70 ns | 60 ns | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
| memory density | 603979776 bit | 603979776 bit | 603979776 bit | 603979776 bit |
| Memory IC Type | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE |
| memory width | 72 | 72 | 72 | 72 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 168 | 168 | 168 | 168 |
| word count | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
| character code | 8000000 | 8000000 | 8000000 | 8000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 8MX72 | 8MX72 | 8MX72 | 8MX72 |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
京公网安备 11010802033920号
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