NPN Silicon AF Transistors
BCW 60
BCX 70
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
q
Complementary types: BCW 61, BCX 71 (PNP)
Type
BCW 60 A
BCW 60 B
BCW 60 C
BCW 60 D
BCW 60 FF
BCW 60 FN
BCX 70 G
BCX 70 H
BCX 70 J
BCX 70 K
Marking
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
Ordering Code
(tape and reel)
Q62702-C1517
Q62702-C1497
Q62702-C1476
Q62702-C1477
Q62702-C1529
Q62702-C1567
Q62702-C1539
Q62702-C1481
Q62702-C1552
Q62702-C1571
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 60
BCX 70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation,
T
S
= 71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
th JA
R
th JS
≤
310
≤
240
Symbol
BCW 60
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
BM
P
tot
T
j
T
stg
32
32
Values
BCW 60 FF BCX 70
32
32
5
100
200
200
330
150
– 65 … + 150
45
45
Unit
V
mA
mW
˚C
K/W
1)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
2
BCW 60
BCX 70
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BCW 60, BCW 60 FF
BCX 70
Collector-base breakdown voltage
I
C
= 10
µ
A
BCW 60, BCW 60 FF
BCX 70
Emitter-base breakdown voltage
I
E
= 1
µ
A
Collector cutoff current
V
CB
= 32 V
V
CB
= 45 V
V
CB
= 32 V,
T
A
= 150 ˚C
V
CB
= 45 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 4 V
DC current gain
1)
I
C
= 10
µ
A,
V
CE
= 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C
= 2 mA,
V
CE
= 5 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
I
C
= 50 mA,
V
CE
= 1 V
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
BCW 60, BCW 60 FF
BCX 70
BCW 60, BCW 60 FF
BCX 70
I
EB0
h
FE
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500
–
–
–
–
–
–
–
–
220
310
460
630
–
–
–
–
V
(BR)CE0
32
45
V
(BR)CB0
32
45
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
20
20
20
20
20
nA
nA
µ
A
µ
A
nA
–
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
3
BCW 60
BCX 70
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter voltage
I
C
= 10
µ
A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
1)
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
f
T
C
obo
C
ibo
h
11e
–
–
–
–
h
12e
–
–
–
1.5
2.0
2.0
3.0
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
10
– 4
–
–
–
250
3
8
–
–
–
kΩ
MHz
pF
V
CEsat
–
–
V
BEsat
–
–
V
BE (on)
–
0.55
–
0.52
0.65
0.78
–
0.75
–
0.70
0.83
0.85
1.05
0.12
0.20
0.25
0.55
V
Values
typ.
max.
Unit
1)
Pulse test:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
4
BCW 60
BCX 70
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BCW 60 A, BCX 70 G
BCW 60 B, BCX 70 H
BCW 60 FF, BCW 60 C, BCX 70 J
BCW 60 FN, BCW 60 D, BCX 70 K
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f
= 1 kHz,
∆
f
= 200 Hz
BCW 60 A to BCX 70 K
BCW 60 FF, BCW 60 FN
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f
= 10 Hz … 50 Hz
BCW 60 FF, BCW 60 FN
h
21e
–
–
–
–
h
22e
–
–
–
–
F
18
24
30
50
–
–
–
–
dB
200
260
330
520
–
–
–
–
µ
s
Values
typ.
max.
Unit
–
–
–
V
n
–
2
1
–
–
2
0.135
µ
V
Semiconductor Group
5
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