Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, SOT-89, 3 PIN
SGA-9189 Parametric
Parameter Name
Attribute value
Is it Rohs certified?
incompatible
Maker
Qorvo
Reach Compliance Code
unknown
Characteristic impedance
50 Ω
structure
COMPONENT
Gain
11.2 dB
JESD-609 code
e0
Maximum operating frequency
3000 MHz
Minimum operating frequency
50 MHz
Maximum operating temperature
85 °C
Minimum operating temperature
-40 °C
RF/Microwave Device Types
WIDE BAND MEDIUM POWER
Terminal surface
Tin/Lead (Sn/Pb)
SGA-9189 Preview
SGA-9189(Z)
Medium Power
Discrete SiGe
Transistor
SGA-9189(Z)
MEDIUM POWER DISCRETE SiGe TRANSISTOR
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-89
Product Description
RFMD’s SGA-9189 is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP
3
=39dBm, and P
1dB
=25.5dBm. This RF
device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe
HBT) process. The SGA-9189 is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gmax (dB)
Features
Available in RoHS Compliant and
Green Packaging
50MHz to 3000MHz Operation
39dBm Output IP
3
Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P
1dB
Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Typical Gmax, OIP3, P1dB @ 5V,180mA
Cost-Effective
44
42
40
38
36
34
32
30
28
26
24
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
25
23
21
19
17
15
13
11
9
7
5
3V to 5V Operation
OIP3, P1dB (dBm)
OIP3
Applications
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 Contains Detailed Appli-
cation Circuits
Gmax
P1dB
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Min.
17.5
11.2
23.5
Specification
Typ.
20.5
13.2
19.0
12.2
40
25.5
40.0
Max.
20.5
13.2
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, Z
S
=Z
S
*, Z
L
=Z
L
*
1960MHz
900MHz [1], Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT,
P
OUT
=+10dBm per
tone
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
Output Third Order Intercept Point
36.5
39.0
Noise Figure
2.1
2.6
DC Current Gain
100
180
300
Breakdown Voltage
7.5
8.5
Thermal Resistance
47
Device Operating Voltage
5.5
Operating Current
155
180
195
Test Conditions: V
CE
=5V, I
CQ
=180mA (unless otherwise noted), T
L
=25°C.
[1] 100% Tested [2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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