BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.031 (0.8)
0.035 (0.9)
Top View
Pin Configuration
1
= Base
2
= Emitter
3
= Collector
Dimensions in inches
and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
1
2
max. .004 (0.1)
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
• NPN Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
• These transistors are subdivided into three groups (A, B,
and C) according to their current gain. The type BC846 is
available in groups A and B, however, the types BC847 and
BC848 can be supplied in all three groups. The BC849 is a
low noise type available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are recommended.
(T
A
= 25°C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
V
CBO
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
310
(1)
(1)
Unit
V
Collector-Emitter Voltage
V
CES
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C
V
CEO
V
EBO
I
C
I
CM
I
BM
–I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
450
320
(1)
150
–65 to +150
Document Number 88164
09-May-02
www.vishay.com
1
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
Current Gain Group A
B
C
Current Gain Group A
B
C
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter VoltageV
BEon
Collector-Base Cutoff Current
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
BC846, BC847, BC848
BC849
BC849
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE
= 5V, I
C
= 2mA
f = 1kHz
Min
—
—
—
1.6
3.2
6.0
—
—
—
—
—
—
—
—
—
110
200
420
—
—
—
—
660
—
—
—
—
—
—
—
—
—
Typ
220
330
600
2.7
4.5
8.7
18
30
60
1.5
⋅
10
-4
2
⋅
10
-4
3
⋅
10
-4
90
150
270
180
290
520
90
200
700
900
700
—
—
—
300
3.5
9
2
1.2
1.4
Max
—
—
—
4.5
8.5
15.0
30
60
110
—
—
—
—
—
—
220
450
800
250
600
—
—
mV
770
15
5
—
6
—
10
4
4
Unit
—
—
—
h
fe
h
ie
V
CE
= 5V, I
C
= 2mA
f = 1kHz
kΩ
h
oe
V
CE
= 5V, I
C
= 2mA
f = 1kHz
µS
h
re
V
CE
= 5 V, I
C
= 2mA
f = 1kHz
—
—
—
—
—
—
—
—
—
mV
mV
h
FE
V
CE
= 5V, I
C
= 10µA
h
FE
V
CE
= 5V, I
C
= 2mA
V
CEsat
V
BEsat
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
580
V
CE
= 5V, I
C
= 10mA
I
CBO
f
T
C
CBO
C
EBO
V
CB
= 30V
V
CB
= 30V, T
J
= 150˚C
V
CE
= 5V, I
C
= 10mA
f = 100MHz
V
CB
= 10V, f = 1MHz
V
EB
= 0.5V, f = 1MHz
V
CE
= 5V, I
C
= 200µA
R
G
=2kΩ,f=1kHz,
∆f=
200Hz
V
CE
= 5V, I
C
= 200µA
R
G
= 2kΩ, f = 30...15000Hz
nA
µA
MHz
pF
pF
dB
dB
dB
Noise Figure
F
Note:
(1) Device on fiberglass substrate, see layout on next page
www.vishay.com
2
Document Number 88164
09-May-02
BC846 thru BC849
0.30 (7.5)
0.12 (3)
Vishay Semiconductors
formerly General Semiconductor
Layout for R
ΘJA
test
Thickness:
Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
Dimensions in inches (millimeters)
0.2 (5)
Admissible power dissipation
versus temperature of substrate backside
Device on fiblerglass substrate, see layout
0.06 (1.5)
0.20 (5.1)
Pulse thermal resistance
versus pulse duration (normalized)
Device on fiblerglass substrate, see layout
DC current gain versus collector current
Collector-Base cutoff current versus
ambient temperature
Document Number 88164
09-May-02
www.vishay.com
3
Embedded System
京公网安备 11010802033920号
EEWORLD
