BC857-C datasheet, PDF - EEWORLD Datasheet

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BC857-C: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size42KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/; Environmental Compliance

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BC857-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BC857-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION .

BC856/7/8

EPITAXIAL PLANAR PNP TRANSISTOR

L

E

B

L

FEATURES

・For

Complementary With NPN Type BC846/847/848.

A

ex) BC857-B-RTK/HU

G

・Suffix

U

: Qualified to AEC-Q101.

2

H

3

1

Q

P

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

BC856

Collector-Base Voltage

BC857

BC858

BC856

Collector-Emitter

Voltage

BC857

BC858

BC856

Emitter-Base Voltage

BC857

BC858

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

I

C

I

E

P

C

*

T

j

T

stg

V

EBO

V

CEO

V

CBO

SYMBOL

RATING

-80

-50

-30

-65

-45

-30

-5

-100

100

350

150

-55½150

mA

mW

℃

Type Name

DIM

A

B

C

D

E

G

H

J

K

L

M

N

P

Q

MILLIMETERS

_

2.93 + 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

7

0.1 MAX

C

N

M

UNIT

1. EMITTER

2. BASE

3. COLLECTOR

V

Marking

Lot No.

P

C

* : Package Mounted On 99.5% Alumina 10×8×0.6mm.

MARK SPEC

TYPE

MARK

BC856A

3A

BC856B

3B

BC857A

3E

BC857B

3F

BC857C

3G

BC858A

3J

BC858B

3K

BC858C

3L

2018. 04. 10

Revision No : 4

K

SOT-23

J

D

1/3

BC857-C Related Products

	BC857-C	BC858-RTK/HU	BC857-B	BC856-A	BC856-B	BC857-A	BC858-B	BC858-C	BC858-A
Description	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
package instruction	SMALL OUTLINE, R-PDSO-G3	,	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow	unknow	unknow	unknow	unknow
Maker	KEC	-	KEC	KEC	KEC	KEC	KEC	KEC	KEC
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	-	45 V	65 V	65 V	45 V	30 V	30 V	30 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	420	-	220	125	220	125	220	420	125
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	-	1	1	1	1	1	1	1
Number of terminals	3	-	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	-	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz

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