PD - 94184D
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
100% R
G
Tested
Benefits
l
l
l
IRL3713
IRL3713S
IRL3713L
HEXFET
®
Power MOSFET
R
DS(on)
max (mW)
3.0@V
GS
= 10V
V
DSS
30V
I
D
260A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713
D
2
Pak
IRL3713S
TO-262
IRL3713L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@Tc = 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Continuous Drain Current, V
GS
@ 10V
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max
30
Units
V
V
A
h
180
h
1040
h
260
330
170
2.2
-55 to +175
± 20
W
W/°C
°C
Thermal Resistance
Symbol
R
θJC
R
qCS
R
θJA
R
θJA
Parameter
Junction-to-Case
i
Typ
Max
0.45
–––
62
40
Units
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
fi
f
–––
0.50
–––
–––
°C/W
Junction-to-Ambient (PCB Mount)
gi
Notes
through
are on page 11
www.irf.com
1
11/12/03
IRL3713/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ
–––
0.027
2.6
3.3
–––
–––
–––
–––
–––
–––
Max Units
–––
–––
3.0
4.0
2.5
50
20
100
200
-200
nA
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 38A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
e
= 30A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
GSS
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
OSS
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
76
–––
–––
–––
0.5
–––
–––
–––
–––
–––
–––
–––
Typ
–––
75
24
37
61
–––
16
160
40
57
5890
3130
630
Max Units
–––
110
–––
–––
92
3.4
–––
–––
–––
–––
–––
–––
–––
pF
ns
Ω
V
DD
= 15V
I
D
= 30A
R
G
= 1.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
nC
S
I
D
= 30A
V
DS
= 15V
V
GS
= 4.5V
Conditions
V
DS
= 15V, I
D
= 30A
f
V
GS
= 0V, V
DS
= 15V
e
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Min
–––
–––
–––
–––
–––
–––
–––
–––
Typ
–––
–––
Max
1530
46
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Typ
–––
Max Units
260
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
R
= 0V
di/dt = 100A/µs
h
h
A
Ãh
––– 1040
0.80
0.68
75
140
78
160
1.3
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
–––
110
210
120
240
V
ns
nC
ns
nC
e
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
e
e
e
T
J
= 125°C, I
F
= 30A, V
R
= 20V
di/dt = 100A/µs
2
www.irf.com
IRL3713/S/L
1000
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
10V
8.0V
6.0V
4.5V
4.0V
3.3V
2.8V
BOTTOM 2.5V
TOP
100
10
10
2.5V
1
2.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 260A
I
D
, Drain-to-Source Current (A)
T
J
= 175
°
C
100
1.5
1.0
10
T
J
= 25
°
C
0.5
1
2.5
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL3713/S/L
100000
14
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
30A
12
10
8
6
4
2
0
V
DS
= 24V
V
DS
= 15V
V
DS
= 6V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T
J
= 175
°
C
I
D
, Drain Current (A)
1000
10us
10
100us
100
T
J
= 25
°
C
1
1ms
T
C
= 25 ° C
T
J
= 175° C
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Single Pulse
10
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL3713/S/L
300
LIMITED BY PACKAGE
250
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
200
-
V
DD
10V
150
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
100
Fig 10a.
Switching Time Test Circuit
V
DS
90%
50
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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