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EFM205

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size177KB,9 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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EFM205 Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

EFM201 thru EFM208
Surface Mount Glass Passivated Super Fast Rectifiers
Reverse Voltage 50 to 600V Forward Current 2.0A
FEATURES
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* High temperature metallurgically
bonded construction
* For use in high frequency rectifier circuits
* Fast switching for high efficiency
* Cavity-free glass passivated junction
* Capable of meeting environmental standards
of MIL-S-19500
* 2.0 A operation at TA=75°C with no thermal runaway
* Typical IR less than 1.0µA
* High temperature soldering guaranteed:
260°C/10 seconds
Mechanical Data
Case:
JEDEC DO-214AA / SMB molded plastic over glass Die
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.098 g
Handling precautin:None
We declare that the material of product compliance
with ROHS requirements
Electrical Characteristic
1.Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Device marking code
Maximum repetitive peak reverse voltage
Maximum RSM voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
A
= 75°C
V
RRM
V
RSM
V
DC
IF(AV)
symbol
EFM
201
EFM
201
EFM
202
EFM
202
EFM
203
EFM
203
EFM
204
EFM
204
EFM
205
EFM
205
EFM
206
EFM
206
EFM
207
EFM
207
EFM
208
EFM
208
Unit
50
35
50
100
70
100
150
105
150
200
140
200
2.0
50
55
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C/W
°C
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Typical thermal resistance (Note 2)
Operating junction and storage temperature range
RθJA
TJ, TSTG
–50
to +150
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 125°C
Typical reverse recovery time (Note 1)
Typical junction capacitance at 4.0V, 1MHz
NOTES:
1. IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. 8.0mm2 (.013mm thick) land areas
symbol
V
F
IR
trr
CJ
EFM
201
EFM
EFM
202
203
0.95
EFM
204
EFM
EFM
205
206
1.25
EFM
207
1.7
EFM
208
Unit
V
µA
ns
PF
5.0
100
35
15.0

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EFM205 EFM201 EFM202 EFM203 EFM204 EFM206 EFM208
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
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