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HM5117405BS-8

Description
EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
Categorystorage    storage   
File Size483KB,33 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HM5117405BS-8 Overview

EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

HM5117405BS-8 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSOJ
package instructionSOJ,
Contacts24
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-J24
length16.9 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width7.62 mm
HM5116405B Series
HM5117405B Series
4,194,304-word
×
4-bit Dynamic Random Access Memory
ADE-203-511A (Z)
Rev. 1.0
Mar. 28, 1996
Description
The Hitachi HM5116405B Series, HM5117405B Series are CMOS dynamic RAMs organized 4,194,304-
word
×
4-bit. They employ the most advanced CMOS technology for high performance and low power.
The HM5116405B Series, HM5117405B Series offer Extended Data Out (EDO) Page Mode as a high
speed access mode.
Features
Single 5 V (±10%)
High speed
Access time: 60 ns/70 ns/80 ns (max)
Low power dissipation
Active mode : 550mW/495 mW/440 mW (max) (HM5116405B Series)
: 605mW/550 mW/495 mW (max) (HM5117405B Series)
Standby mode : 11 mW (max)
:0.83 mW (max) (L-version)
EDO page mode capability
Long refresh period
4096 refresh cycles : 64 ms (HM5116405B Series)
: 128 ms (L-version)
2048 refresh cycles : 32 ms (HM5117405B Series)
: 128 ms (L-version)
3 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Battery backup operation (L-version)
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS
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