IC 4M X 1 NIBBLE MODE DRAM, 80 ns, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20, Dynamic RAM
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Parts packaging code | SOJ |
| package instruction | SOJ, |
| Contacts | 20 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | NIBBLE |
| Maximum access time | 80 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-PDSO-J20 |
| JESD-609 code | e0 |
| length | 17.15 mm |
| memory density | 4194304 bit |
| Memory IC Type | NIBBLE MODE DRAM |
| memory width | 1 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 20 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4MX1 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | SOJ |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| refresh cycle | 1024 |
| Maximum seat height | 3.75 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 8.89 mm |
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