EEWORLDEEWORLDEEWORLD

Part Number

Search

IXGK35N120BD1

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size88KB,3 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

IXGK35N120BD1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IXGK35N120BD1 - - View Buy Now

IXGK35N120BD1 Overview

Insulated Gate Bipolar Transistor,

IXGK35N120BD1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
Reach Compliance Codeunknown

IXGK35N120BD1 Preview

Preliminary Data Sheet
HiPerFAST
TM
IGBT
IXGK 35N120B
IXGX 35N120B
IXGK 35N120BD1
IXGX 35N120BD1
(D1)
V
CES
= 1200 V
I
C25
=
70 A
V
CE(sat)
= 3.3 V
t
fi(typ)
=
160 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
70
35
140
I
CM
= 90
@ 0.8 V
CES
350
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-264 AA (IXGK)
G
C
E
C (TAB)
PLUS 247
TM
(IXGX)
G
C (TAB)
C
E
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
M
d
Weight
Mounting torque (M3) (IXGK)
1.13/10Nm/lb.in.
TO-264 AA
PLUS247
TM
10
6
g
g
International standard packages
JEDEC TO-264 and PLUS247
TM
Low switching losses, low V
(sat)
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
T
J
= 25°C
T
J
= 125°C
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 750
µA,
V
CE
= V
GE
5
250
5
±100
3.3
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies
(UPS)
Switched-mode and resonant-mode
power supplies
Advantages
T
J
= 125°C
2.7
High power density
Easy to mount with 1 screw,
(isolated mounting screw hole)
Spring clip or clamp assembly
possible.
DS98960 (10/02)
© 2002 IXYS All rights reserved
IXGK 35N120B
IXGX 35N120B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
30
40
4620
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
260
90
170
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
28
57
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 5
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 5
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
50
27
180
160
3.8
55
31
2.6
300
360
8.0
280
320
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
IXGK
IXGX
35N120BD1
35N120BD1
TO-264 AA Outline (IXGK)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
300
µs,
duty cycle
2 %
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
7.3 mJ
ns
ns
mJ
ns
ns
mJ
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247
TM
Outline (IXGX)
0.35 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.35
32
225
40
36
60
V
Terminals:
I
F
= I
C90
, V
GE
= 0 V, Pulse test,
t
300
µs,
duty cycle d
2 %, T
J
= 125°C
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/µs
V
R
= 540 V
T
J
=100°C
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V T
J
= 25°C
A
ns
ns
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
5,049,961
5,063,307
0.65 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
5,187,117
5,237,481
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
5,486,715
5,381,025
6,306,728B1
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1325  2868  2796  1286  1472  27  58  57  26  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号