FP9333PM datasheet, PDF - EEWORLD Datasheet

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FP9333PM: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size77KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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FP9333PM Overview

RF AMPLIFIER MODEL

FP9333PM Parametric

Parameter Name	Attribute value
Maker	API Technologies
package instruction	FP-4
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	10 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	1000 MHz
Minimum operating frequency	5 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM9333PM

Features

!

Superior Phase Noise Performance

Medium Gain: 11.5 dB Typical

Output Power: +16 dBm Typical

Operating Temp. -55 ºC to +85 ºC

TYPICAL

Ta= 25 ºC

5 - 1000 MHz

11.5

+16.0

-15

<1.25:1

<1.5:1

5.0

+15

48

MIN/MAX

Ta = -55 ºC to +85 ºC

5 - 1000 MHz

10.0 Min.

+14.0 Min.

-13 Max.

2.0:1 Max.

6.5 Max.

+15

52 Max.

Available as:

TM9333PM, 4 Pin TO-8 (T4)

TN9333PM, 4 Pin Surface Mount (SM3)

FP9333PM, 4 Pin Flatpack (FP4)

BX9333PM, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 ºC

Second Order Harmonic Intercept Point ....... +50 dBm (Typ.)

Second Order Two Tone Intercept Point ........ +44 dBm (Typ.)

Third Order Two Tone Intercept Point ............ +30 dBm (Typ.)

Maximum Ratings

Ambient Operating Temperature ................ -55ºC to +100 ºC

Storage Temperature ................................. -62ºC to +125 ºC

Case Temperature .................................................. +125 ºC

DC Voltage .......................................................... +18 Volts

Continuous RF Input Power .................................. +13 dBm

Short Term RF Input Power .... 200 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Guaranteed Phase Noise Performance

(dBc/Hz)

Frequency

100 Hz

1 kHz

10 kHz

100 kHz

1 MHz

Typical

-166

-172

-173

Guarantee (Min.)

-162

-168

-169

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

In

Out

Noise Figure (dB)

Power

Vdc

mA

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

13

12

11

10

9

+18

+17

+16

+15

+14

Start

2.0

1.5

1.0

5 MHz

Stop 1000 MHz

Start 5 MHz

Stop 1000 MHz

Gain (dB)

0

- 5

-10

-15

-20

6

5

4

3

2

2.0

1.5

1.0

Start 5 MHz

Reverse Isolation (dB)

-130

-140

-150

-160

Phase Noise (dBc/Hz)

Stop 1000 MHz

1 dB Comp. (dBm)

Noise Figure (dB)

-170

-180

-190

100

1K

10K

100K

1M

Start 5 MHz

Stop 1000 MHz

_________Guarantee __ __ __ __Typical

Input VSWR

Output VSWR

Phase Noise Test Conditions:

Carrier Frequency: 100 MHz

Power Output: +16 dBm

Temperature: 25 ºC

Agilent ES5500 System

Stop 1000 MHz

Start 5 MHz

Stop 1000 MHz

Start 5 MHz

Legend

+25 ºC

+85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

4/1/04

www.SpectrumMicrowave.com

Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001

FP9333PM Related Products

	FP9333PM	BX9333PM	TM9333PM	TN9333PM
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	compliant	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	10 dB	10 dB	10 dB	10 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	1000 MHz	1000 MHz	1000 MHz	1000 MHz
Minimum operating frequency	5 MHz	5 MHz	5 MHz	5 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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