AM82731-050 datasheet, PDF - EEWORLD Datasheet

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AM82731-050: DescriptionRF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; CategoryDiscrete semiconductor The transistor; File Size55KB，4 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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AM82731-050 Overview

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-050 Parametric

Parameter Name	Attribute value
Maker	STMicroelectronics
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Shell connection	BASE
Maximum collector current (IC)	8 A
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	S BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	250 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	167 W
Minimum power gain (Gp)	6 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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AM82731-050

RF & MICROWAVE TRANSISTORS

S-BAND RADAR APPLICATIONS

REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

RUGGEDIZED VSWR 3:1 @ 1 dB OVER-

DRIVE

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

OUT

50 W MIN. WITH 6 dB GAIN

.400 x .400 2LFL (S036)

hermetically sealed

ORDER CODE

AM82731-050

BRANDING

82731-50

DESCRIPTION

The AM82731-050 device is a high power silicon

bipolar NPN transistor specifically designed for S-

Band radar pulsed output and driver applications.

The device is capable of operation over a wde

range of pulse widths, duty cycles and tempera-

tures and can withstand a 3:1 output VSWR with

a +1 dB input overdrive. Low RF thermal resist-

ance, refractory/gold metallization, and compu-

terized automatic wire bonding techniques ensure

high reliability and product consistency.

The AM82731-050 is supplied in the AMPAC™

Hermetic Metal/Ceramic package with internal

Input/Output impedance matching circuitry, and is

intended for military and other high reliability ap-

plications.

ABSOLUTE MAXIMUM RATINGS

case

Symbol

Parameter

Value

Unit

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

DISS

STG

Power Dissipation*

Device Current*

≤

50°C)

167

250

−

65 to +200

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

THERMAL DATA

TH(j-c)

Junction-Case Thermal Resistance*

1.2

°C/W

*Applies only to rated RF amplifier operation

August 1992

1/4

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