AM82731-025
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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
LOW PARASITIC, DOUBLE LEVEL MET-
AL DESIGN
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
3:1 VSWR @ 1 dB OVERDRIVE
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT IMPEDANCE MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
=
25 W MIN. WITH 6.2 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM82731-025
BRANDING
82731-25
DESCRIPTION
The AM82731-025 device is a high power silicon bi-
polar NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1 output VSWR with a +1dB input
over drive. Low RF thermal resistance, refrac-
tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching circuitry, and is intended for mili-
tary and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
Ic
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
≤
50°C)
100
4
46
250
−
65 to +200
W
A
V
°C
°C
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
2.0
°C/W
*Applies only to rated RF amplifier operation
August 1992
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AM82731-025
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCES
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCES
Z
CL
FREQ.
L
=
2.7 GHz
• =
2.8 GHz
M
=
2.9 GHz
• =
3.0 GHz
H
=
3.1 GHz
Z
IN
(Ω)
12.0 + j 3.0
9.5 + j 2.5
6.5 + j 0.0
6.0
−j
1.5
5.0
−j
3.0
Z
CL
(Ω)
15.0
−
j 4.0
17.0
−
j 3.0
15.5
−
j 3.0
14.5
−
j 3.0
11.0
−
j 3.0
P
IN
=
6.0 W
V
CC
=
40 V
Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in inches.
Sustrate material: .025 thick Al
2
O
3
(Er = 9.6)
C1
C2
: 22 pF Chip Capacitor
: 1500 pF RF Feedthrough
L1
L2
: No. 26 Wire, 2 Turn, 0.08 Inch I.D.
: No. 26 Wire, 2 Turn, 0.08 Inch I.D.
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AM82731-025
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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