FP5124 datasheet, PDF - EEWORLD Datasheet

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FP5124: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size62KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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FP5124 Overview

RF AMPLIFIER MODEL

FP5124 Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	19.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	200 MHz
Minimum operating frequency	20 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	1.6
Base Number Matches	1

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RF AMPLIFIER

MODEL

TM5124

Features

Superior Phase Noise Performance

High Gain: 20.5 dB Typical

High Output Power: +20 dBm Typical

Operating Temp. - 55 ºC

to +85

ºC

TYPICAL

Ta= 25 ºC

20 - 200 MHz

20.5

+20

-24

1.5:1

1.2:1

2.5

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

20 - 200 MHz

19.5 Min.

+18 Min.

-23.5 Max.

1.6:1 Max.

3.5Max.

+15

58 Max.

Available as:

TM5124, 4 Pin TO-8 (T4)

TN5124, 4 Pin Surface Mount (SM3)

FP5124, 4 Pin Flatpack (FP4)

BX5124, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +49 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +44 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +34 dBm (Typ.)

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage .......................................................... + 18Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Specifications

CHARACTERISTIC

Frequency (MHz)

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

Noise figure (dB)

Power

Vdc

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

+22

+21

+20

+19

+18

Start

20 MHz

Start 20 MHz

Gain (dB)

-10

-20

-30

Stop 200 MHz

Reverse Isolation (dB)

Noise Figure (dB)

3.5

2.5

1.5

Start

2.0

1.5

1.0

Start

-40

Start

2.0

1.5

1.0

20 MHz

Stop 200 MHz

20 MHz

Stop 200 MHz

1 dB Comp. (dBm)

Input VSWR

Output VSWR

Stop 200 MHz

Start 20 MHz

Stop 200 MHz

20 MHz

Stop 200 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

02/08/05

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

FP5124 Related Products

	FP5124	BX5124	TM5124	TN5124
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Reach Compliance Code	compli	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	19.5 dB	19.5 dB	19.5 dB	19.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	200 MHz	200 MHz	200 MHz	200 MHz
Minimum operating frequency	20 MHz	20 MHz	20 MHz	20 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	1.6	1.6	1.6	1.6

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