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PU3171

Description
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin
CategoryDiscrete semiconductor    The transistor   
File Size167KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PU3171 Overview

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin

PU3171 Parametric

Parameter NameAttribute value
MakerPanasonic
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSIP-T8
Number of components3
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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