TN5122 datasheet, PDF - EEWORLD Datasheet

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TN5122: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size71KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TN5122 Overview

RF AMPLIFIER MODEL

TN5122 Parametric

Parameter Name	Attribute value
Maker	API Technologies
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	15.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM5122

Features

Medium Gain: 17.0 dB Typical

Output Power: +20 dBm Typical

Operating Temp. - 55 ºC to + 85 ºC

Environmental Screening Available

Available as:

TM5122, 4 Pin TO-8 (T4)

TN5122, 4 Pin Surface Mount (SM3)

BX5122, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point....... +43 dBm (Typ.)

Second Order Two Tone Intercept Point........ +38 dBm (Typ.)

Third Order Two Tone Intercept Point............ +30 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

Noise Figure (dB)

Power

Vdc

TYPICAL

Ta= 25 ºC

10-500 MHz

17+/-0.5

+20

-22

<1.8:1

4.2

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

10-500 MHz

15.5 Min.

+19 Min.

-20 Max.

2.0:1 Max.

4.6 Max.

+15 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power.... 100 Milliwatts (1 Minute Max.)

Maximum Peak Power.................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 10 MHz

Stop 500 MHz

Gain (dB)

-10

- 20

- 30

- 40

- 50

Reverse Isolation (dB)

Start 10 MHz

Stop 500 MHz

Start 10 MHz

Noise Figure (dB)

Stop 500 MHz

1 dB Comp. (dBm)

Start 10 MHz

Stop 500 MHz

Input VSWR

2.0

1.5

1.0

Start 10 MHz

Stop 500 MHz

Output VSWR

2.0

1.5

1.0

Start 10 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

06/16/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN5122 Related Products

	TN5122	BX5122	TM5122
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Reach Compliance Code	compli	compliant	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT
Gain	15.5 dB	15.5 dB	15.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz
Minimum operating frequency	10 MHz	10 MHz	10 MHz
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2
Maker	API Technologies	API Technologies	-
Base Number Matches	-	1	1

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