TN5124PM datasheet, PDF - EEWORLD Datasheet

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TN5124PM: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size64KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TN5124PM Overview

RF AMPLIFIER MODEL

TN5124PM Parametric

Parameter Name	Attribute value
Maker	API Technologies
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	19.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	200 MHz
Minimum operating frequency	20 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	1.6

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RF AMPLIFIER

MODEL

TM5124PM

Features

!

Superior Phase Noise Performance

High Gain: 20.5 dB Typical

High Output Power: +20 dBm Typical

Operating Temp. -55 ºC

to +85

ºC

TYPICAL

Ta= 25 ºC

20 - 200 MHz

20.5

+20

-24

1.5:1

1.2:1

2.5

+15

53

MIN/MAX

Ta = -55 ºC to +85 ºC

20 - 200 MHz

19.5 Min.

+18 Min.

-23.5 Max.

1.6:1 Max.

3.5 Max.

+15

58 Max.

Available as:

TM5124PM, 4 Pin TO-8 (T4)

TN5124PM, 4 Pin Surface Mount (SM3)

FP5124PM, 4 Pin Flatpack (FP4)

BX5124PM, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 ºC

Second Order Harmonic Intercept Point ...... +49 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +44 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +34 dBm (Typ.)

Maximum Ratings

Ambient Operating Temperature ................ -55ºC to +100 ºC

Storage Temperature ................................. -62ºC to +125 ºC

Case Temperature .................................................. +125 ºC

DC Voltage .......................................................... +18 Volts

Continuous RF Input Power .................................. +13 dBm

Short Term RF Input Power ...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Specifications

CHARACTERISTIC

Frequency (MHz)

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

In

Out

Noise Figure (dB)

Power

Vdc

mA

VSWR

Guaranteed Phase Noise Performance

(dBc/Hz)

Frequency

100 Hz

1 KHz

10 KHz

100 KHz

1 MHz

Typical

-165

-166

-170

-169

Guarantee (Min.)

-161

-162

-166

-165

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

22

21

20

19

18

Start 20 MHz

Stop 200 MHz

Gain (dB)

0

-10

-20

-30

-40

Start 20 MHz

Reverse Isolation (dB)

-130

-140

-150

-160

Phase Noise (dBc/Hz)

Stop 200 MHz

+22

+21

+20

+19

+18

Start 20 MHz

1 dB Comp. (dBm)

3.5

2.5

Noise Figure (dB)

-170

-180

-190

100

1k

10k

100k

1M

1.5

Input VSWR

Stop 200 MHz

Start 20 MHz

_________Guarantee __ __ __ __Typical

Output VSWR

Stop 200 MHz

2.0

1.5

1.0

Start 20 MHz

2.0

1.5

1.0

Stop 200 MHz

Start 20 MHz

Phase Noise Test Conditions:

Carrier Frequency: 160 MHz

Power Output: +20 dBm

Temperature: 25 ºC

Agilent ES5500 System

Stop 200 MHz

Legend

+25 ºC

+85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

11/19/03

www.SpectrumMicrowave.com

Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN5124PM Related Products

	TN5124PM	BX5124PM	FP5124PM	TM5124PM
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	compliant	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	19.5 dB	19.5 dB	19.5 dB	19.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	200 MHz	200 MHz	200 MHz	200 MHz
Minimum operating frequency	20 MHz	20 MHz	20 MHz	20 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	1.6	1.6	1.6	1.6

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