TN5125 datasheet, PDF - EEWORLD Datasheet

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TN5125: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size72KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TN5125 Overview

RF AMPLIFIER MODEL

TN5125 Parametric

Parameter Name	Attribute value
Maker	API Technologies
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT
Gain	19.5 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	100 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM5125

Features

High Gain: 20.5 dB Typical

High Power: +24 dBm Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM5125, 4 Pin TO-8 (T4)

TN5125, 4 Pin Surface Mount (SM3)

FP5125, 4 Pin Flatpack (FP4)

BX5125, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point...... +58 dBm (Typ.)

Second Order Two Tone Intercept Point...... +52 dBm (Typ.)

Third Order Two Tone Intercept Point...........+40 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

Out

TYPICAL

Ta= 25 ºC

5-125 MHz

20.5

+24

-24

1.7:1

1.35:1

2.0

+15

MIN/MAX

Ta = -55 ºC to +85 ºC

10-100 MHz

19.5 Min./21 Max

+22.5 Min.

-23 Max.

2.2:1 Max.

2.0:1 Max.

3.0 Max.

+15

90 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage .......................................................... + 18Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power..................... 0.5 Watt (3

µsec

Max.)

Noise Figure (dB)

Power

Vdc

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Gain (dB)

Start 10 MHz

Stop 100 MHz

Reverse Isolation (dB)

- 10

- 20

- 30

- 40

Start 10 MHz

Stop 100 MHz

Noise Figure (dB)

Start 10 MHz

Stop 100 MHz

+26

+25

+24

+23

+22

1 dB Comp (dBm)

Input VSWR

2.0

1.5

1.0

2.0

1.5

1.0

Start 10 MHz

Stop 100 MHz

Start 10 MHz

Output VSWR

Start 10 MHz

Stop 100 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

06/16/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TN5125 Related Products

	TN5125	BX5125	FP5125	TM5125
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	19.5 dB	19.5 dB	19.5 dB	19.5 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	100 MHz	100 MHz	100 MHz	100 MHz
Minimum operating frequency	10 MHz	10 MHz	10 MHz	10 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	NARROW BAND MEDIUM POWER	NARROW BAND MEDIUM POWER	NARROW BAND MEDIUM POWER	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	2	2	2	2
package instruction	-	H1	FP4, FLATPACK-4	T4, TO-8, 4 PIN

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