M374S6453BT0
M374S6453BT0 SDRAM DIMM
PC100 Unbuffered DIMM
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung M374S6453BT0 is a 64M bit x 72 Synchronous
Dynamic RAM high density memory module. The Samsung
M374S6453BT0 consists of eighteen CMOS 32M x 8 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM.
The M374S6453BT0 is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications.
FEATURE
• Performance range
Part No.
M374S6453BT0-C1H
M374S6453BT0-C1L
•
•
•
•
•
Max Freq. (Speed)
100MHz (10ns @ CL=2)
100MHz (10ns @ CL=3)
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB :
Height (1,375mil),
double sided component
PIN CONFIGURATIONS (Front side/back side)
Pin Front
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
CB0
CB1
V
SS
NC
NC
V
DD
WE
DQM0
Pin
Front
Pin Front
DQ18
DQ19
V
DD
DQ20
NC
*V
REF
CKE1
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
CLK2
NC
WP
**SDA
**SCL
V
DD
Pin
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
CB4
CB5
V
SS
NC
NC
V
DD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
CLK1
A12
V
SS
CKE0
CS3
DQM6
DQM7
*A13
V
DD
NC
NC
CB6
CB7
V
SS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
V
DD
DQ52
NC
*V
REF
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
NC
**SA0
**SA1
**SA2
V
DD
29 DQM1 57
58
CS0
30
31
DU
59
60
32
V
SS
61
33
A0
62
34
A2
35
A4
63
64
36
A6
65
37
A8
38 A10/AP 66
39
BA1
67
68
40
V
DD
69
41
V
DD
42 CLK0 70
43
V
SS
71
72
44
DU
73
45
CS2
46 DQM2 74
47 DQM3 75
76
48
DU
77
49
V
DD
78
50
NC
51
79
NC
80
52
CB2
81
53
CB3
82
54
V
SS
55 DQ16 83
56 DQ17 84
PIN NAMES
Pin Name
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
CB0 ~ 7
CLK0 ~ CLK3
CS0 ~ CS3
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
*V
REF
SDA
SCL
SA0 ~ 2
WP
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Check bit (Data-in/data-out)
Clock input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Power supply for reference
Serial data I/O
Serial clock
Address in EEPROM
Write protection
Don′t use
No connection
CKE0 ~ CKE1 Clock enable input
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.0 April 2000
M374S6453BT0
PIN CONFIGURATION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
PC100 Unbuffered DIMM
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM.
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+t
SS
prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Check bits for ECC.
WP pin is connected to V
SS
through 47KΩ Resistor.
When WP is "high", EEPROM Programming will be inhibited and the entire memory will
be wirte-protected.
Power and ground for the input buffers and the core logic.
CKE
Clock enable
A0 ~ A12
BA0 ~ BA1
RAS
CAS
WE
DQM0 ~ 7
DQ0 ~ 63
CB0 ~ 7
WP
V
DD
/V
SS
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Check bit
Write protection
Power supply/ground
Rev. 0.0 April 2000
M374S6453BT0
FUNCTIONAL BLOCK DIAGRAM
CS1
CS0
DQM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
PC100 Unbuffered DIMM
•
CS
U0
•
DQM4
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
DQM
CS
U5
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U9
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQM5
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
DQM
CS
U6
CS
U1
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U10
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CS3
CS2
DQM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U2
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U11
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U7
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U16
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
•
CS
U3
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U12
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U8
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U17
•
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U13
Serial PD
V
DD
SCL
SDA
A0
A1
A2
•
WP
47KΩ
A0 ~ An, BA0 & 1
RAS
CAS
WE
CKE0
10Ω
DQn
V
DD
Vss
•
•
•
•
SDRAM U0 ~ U17
SDRAM U0 ~ U17
SDRAM U0 ~ U17
SDRAM U0 ~ U17 CKE1
SDRAM U0 ~ U8
10KΩ
•
SDRAM U9 ~ U17
10Ω
CLK0/1/2/3
SA0 SA1 SA2
•
•
•
•
3.3pF
*1
U1/U3/U0/U4
U6/U7/U5/U8
U10/U12/U9/U13
U15/U16/U14/U17
U2/U11
Every DQpin of SDRAM
Two 0.1uF Capacitors
per each SDRAM
To all SDRAMs
*1 : For 4 loads, CLK2 & CLK3 only.
Rev. 0.0 April 2000
M374S6453BT0
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
PC100 Unbuffered DIMM
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
18
50
Unit
V
V
°C
W
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DDQ
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
Note
Notes :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23°C, f = 1MHz, V
REF
= 1.4V
±
200 mV)
Pin
Symbol
C
ADD
C
IN
C
CKE
C
CLK
C
CS
C
DQM
C
OUT1
C
OUT2
Min
50
50
28
18
18
13
13
13
Max
95
95
50
25
30
20
18
18
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0 ~ CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
CB (CB0 ~ CB7)
Rev. 0.0 April 2000
M374S6453BT0
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70°C)
Parameter
Symbol
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
Test Condition
PC100 Unbuffered DIMM
Version
-1H
-1L
1,260
36
36
288
Unit
Note
Operating current
(One bank active)
Precharge standby current in
power-down mode
I
CC1
I
CC2
P
I
CC2
PS
I
CC2
N
mA
1
mA
Precharge standby current in
non power-down mode
I
CC2
NS
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
I
CC3
N
I
CC3
NS
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
mA
252
108
108
540
450
mA
mA
mA
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
I
CC4
1,305
mA
1
I
CC5
I
CC6
2,160
54
mA
mA
2
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Rev. 0.0 April 2000
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