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SMDA12C-8

Description
300 W, BIDIRECTIONAL, 10 ELEMENT, SILICON, TVS DIODE, MS-012AB
Categorysemiconductor    Discrete semiconductor   
File Size581KB,3 Pages
ManufacturerUN semiconductor
Websitehttp://www.unsemi.com.tw/
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SMDA12C-8 Overview

300 W, BIDIRECTIONAL, 10 ELEMENT, SILICON, TVS DIODE, MS-012AB

Transient Voltage Suppressors Array for ESD Protection
SMDAXXC-8 Series
Description
The SMDAxxC-8 series of transient voltage suppressors are
designed to protect components which are connected to data
and transmission lines from voltage surges caused by
electrostatic discharge (ESD), electrical fast transients (EFT),
and lightning.
TVS diodes are characterized by their high surge capability, low
operating and clamping voltages, and fast response time.
This makes them ideal for use as board level protection of
sensitive semiconductor components. The SMDAxxC-8 is
designed to provide transient suppression on multiple data lines
and I/O ports. The low profile SOP-14 design allows the user to
protect up to eight data and I/O lines with one package. They
are bidirectional device and may be used on lines where the
normal operating voltage is above and below ground (i.e. -12V
to +12V).
SOP-14
Feature
u
u
u
u
u
u
u
u
u
300 Watts Peak Pulse Power per Line (tp=8/20μs)
Protects Eight Data Lines
Working Voltage : 5V, 12V, 15V and 24V
Monolithic Design
RoHS Compliant
IEC61000-4-2 (ESD)
±30kV
(air),
±30kV
(contact) - 5V,
12V, 15V
IEC61000-4-2 (ESD)
±15kV
(air),
±8kV
(contact) -24V
IEC61000-4-4 (EFT) 40A (5/50ηs)
IEC61000-4-5 (Lightning) 12A (8/20μs)
Functional Diagram
Applications
u
u
u
u
u
u
u
u
Microprocessor Based Equipment
RS-232 and RS-422 Data Lines
LAN/WAN Equipment
Notebooks, Desktops and Servers
Instrumentation
Set Top Box
Serial and Parallel Ports
Peripherals
Mechanical Characteristics
u
u
u
u
u
u
JEDEC SOP-14 Package
Molding Compound Flammability Rating : UL 94V-0
Weight 150.0 Milligrams (Approximate)
Quantity Per Reel : 500pcs
Reel Size : 7 inch
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
P
PP
T
L
T
STG
T
J
Parameter
Peak Pulse Power (tp=8/20μs waveform)
Lead Soldering Temperature
Storage Temperature Range
Operating Temperature Range
IEC61000-4-4 (EFT)
IEC61000-4-5 ( Lightning )
Value
300
260 (10sec)
-55 to +150
-55 to +150
40
12
Units
W
ºC
ºC
ºC
A
A
UN Semiconductor Co., Ltd.
Revision January 06, 2014
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2014
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.

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Description 300 W, BIDIRECTIONAL, 10 ELEMENT, SILICON, TVS DIODE, MS-012AB 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012-AB 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AB BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AB 300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012-AB
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