SI4420DYS62Z datasheet, PDF - EEWORLD Datasheet

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SI4420DYS62Z: DescriptionSmall Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size282KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SI4420DYS62Z Overview

Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4420DYS62Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	12.5 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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Si4420DY

January 2000

Si4420DY*

Single N-Channel Logic Level PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

This device is well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Features

12.5 A, 30 V. R

DS(ON)

= 0.009

@ V

= 10 V

DS(ON)

= 0.013

@ V

= 4.5 V

Low gate charge.

Fast switching speed.

High performance trench technology for extremely

low R

DS(ON)

High power and current handling capability.

Applications

Battery switch

Load switch

Motor controls

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Fairchild Semiconductor Corporation

Si4420DY Rev. B

SI4420DYS62Z Related Products

	SI4420DYS62Z	SI4420DYL86Z	SI4420DYD84Z	SI4420DYL99Z
Description	Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Parts packaging code	SOT	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	12.5 A	12.5 A	12.5 A	12.5 A
Maximum drain-source on-resistance	0.009 Ω	0.009 Ω	0.009 Ω	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	1	1	1	1
Number of terminals	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Fairchild	-	Fairchild	Fairchild

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