K4S643233E-SN10 datasheet, PDF

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K4S643233E-SN10: DescriptionSynchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90; Categorystorage storage; File Size67KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S643233E-SN10 Overview

Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90

K4S643233E-SN10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e0
length	13 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	90
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	2MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.45 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.15 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

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K4S643233E-SE/N

CMOS SDRAM

2M x 32 SDRAM

512K x 32bit x 4 Banks

Synchronous DRAM

LVTTL(3.0V & 3.3V)

Extended Temperature

90-Ball FBGA

Revision 1.5

April 2002

Samsung Electronics reserves the right to change products or specification without notice.

-1-

Rev. 1.5 April 2002

K4S643233E-SN10 Related Products

	K4S643233E-SN10	K4S643233E-SN80	K4S643233E-SE70	K4S643233E-SE80	K4S643233E-SE10	K4S643233E-SN70
Description	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90	Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90, FBGA-90
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32
Contacts	90	90	90	90	90	90
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	5.5 ns	6 ns	6 ns	5.5 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	125 MHz	143 MHz	125 MHz	100 MHz	143 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
JESD-609 code	e0	e0	e0	e0	e0	e0
length	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	90	90	90	90	90	90
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
organize	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Maximum seat height	1.45 mm	1.45 mm	1.45 mm	1.45 mm	1.45 mm	1.45 mm
self refresh	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.15 mA	0.16 mA	0.17 mA	0.16 mA	0.15 mA	0.17 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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