KM616V4000C, KM616U4000C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0
0.1
History
Initial draft
Revised
- Speed bin change
Commercial : 70/85ns
→
70/85/100ns
Industrial : 85/100ns
→
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
→
4mA at read
I
CC1
: 5mA
→
6mA
I
CC2
: 50mA
→
45mA
I
SB
: 0.5mA
→
0.3mA
I
SB1
: 10µA
→
15µA for commercial parts
Errata correction
Finalize
Draft Date
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
0.11
1.0
August 13, 1998
November 16, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
November 1998
KM616V4000C, KM616U4000C Family
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology: TFT
•
Organization: 256K x16
•
Power Supply Voltage
KM616V4000C Family: 3.0~3.6V
KM616U4000C Family: 2.7~3.3V
•
Low Data Retention Voltage: 2V(Min)
•
Three state output and TTL Compatible
•
Package Type: 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V4000C and KM616U4000C families are fabricated
by SAMSUNG′s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system design.
The families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
KM616V4000CL-L
KM616V4000CLI-L
KM616U4000CL-L
KM616U4000CLI-L
Operating Temperature
Commercial(0~70°C)
Industrial(-40~85°C)
Commercial(0~70°C)
Industrial(-40~85°C)
Vcc Range
3.0~3.6V
3.0~3.6V
2.7~3.3V
2.7~3.3V
Speed(ns)
Standby
(I
SB1
, Max)
15µA
20µA
15µA
20µA
45mA
44-TSOP2-F/R
Operating
(I
CC2
, Max)
PKG Type
70
1)
/85/100
70
1)
/85/100
70
1)
/85/100
70
1)
/85/100
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A0
A1
A2
A3
A4
A13
A14
A15
A16
A17
Precharge circuit.
Vcc
Vss
44-TSOP2
Forward
44-TSOP2
Reverse
Row
select
Memory array
1024 rows
256×16 columns
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
A
0
~A
17
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name Function
Vcc
Vss
LB
UB
N.C
Power
Ground
Lower Byte (I/O
1~8
)
WE
A5 A6 A7 A8 A9 A10 A11 A12
Upper Byte (I/O
9~16
)
No Connection
OE
UB
LB
CS
I/O
1
~I/O
16
Data Input/Output
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
November 1998
KM616V4000C, KM616U4000C Family
PRODUCT LIST
Commercial Temperature Product(0~70°C)
Part Name
KM616V4000CLT-7L
KM616V4000CLT-8L
KM616V4000CLT-10L
KM616V4000CLR-7L
KM616V4000CLR-8L
KM616V4000CLR-10L
KM616U4000CLT-7L
KM616U4000CLT-8L
KM616U4000CLT-10L
KM616U4000CLR-7L
KM616U4000CLR-8L
KM616U4000CLR-10L
Function
44-TSOP2-F, 70ns, 3.3V, LL
44-TSOP2-F, 85ns, 3.3V, LL
44-TSOP2-F, 100ns, 3.3V, LL
44-TSOP2-R, 70ns, 3.3V, LL
44-TSOP2-R, 85ns, 3.3V, LL
44-TSOP2-R, 100ns, 3.3V, LL
44-TSOP2-F, 70ns, 3.0V, LL
44-TSOP2-F, 85ns, 3.0V, LL
44-TSOP2-F, 100ns, 3.0V, LL
44-TSOP2-R, 70ns, 3.0V, LL
44-TSOP2-R, 85ns, 3.0V, LL
44-TSOP2-R, 100ns, 3.0V, LL
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
KM616V4000CLTI-7L
KM616V4000CLTI-8L
KM616V4000CLTI-10L
KM616V4000CLRI-7L
KM616V4000CLRI-8L
KM616V4000CLRI-10L
KM616U4000CLTI-7L
KM616U4000CLTI-8L
KM616U4000CLTI-10L
KM616U4000CLRI-7L
KM616U4000CLRI-8L
KM616U4000CLRI-10L
Function
44-TSOP2-F, 70ns, 3.3V, LL
44-TSOP2-F, 85ns, 3.3V, LL
44-TSOP2-F, 100ns, 3.3V, LL
44-TSOP2-R, 70ns, 3.3V, LL
44-TSOP2-R, 85ns, 3.3V, LL
44-TSOP2-R, 100ns, 3.3V, LL
44-TSOP2-F, 70ns, 3.0V, LL
44-TSOP2-F, 85ns, 3.0V, LL
44-TSOP2-F, 100ns, 3.0V, LL
44-TSOP2-R, 70ns, 3.0V, LL
44-TSOP2-R, 85ns, 3.0V, LL
44-TSOP2-R, 100ns, 3.0V, LL
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.5 to V
CC
+0.5
-0.3 to 4.6
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
Remark
-
-
-
-
KM616V4000C, KM616U4000C
KM616V4000CI, KM616U4000CI
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
November 1998
KM616V4000C, KM616U4000C Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
KM616V4000C Family
KM616U4000C Family
All Family
KM616V4000C, KM616U4000C Family
KM616V4000C, KM616U4000C Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+2.0V in case of pulse width
≤
30ns
3. Undershoot : -2.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
1. Industrial product = 20µA
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
V
OL
V
OH
I
SB
I
SB1
V
IL
=Vss to Vcc
Test Conditions
Min
-1
-1
-
-
-
-
2.2
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
1
1
4
6
45
0.4
-
0.3
15
1)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA CS≤0.2V,V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Other inputs=0~Vcc
4
Revision 1.0
November 1998
KM616V4000C, KM616U4000C Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
C
L
1
)
1.Including scope and jig capacitance
AC CHARACTERISTICS
(KM616V4000C Family : Vcc=3.0~3.6V, KM616U4000C Family : Vcc=2.7~3.3V
Commercial product :T
A
=0 to 70°C, Industrial product : T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
70ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
LB, UB valid to data output
Read
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
OE disable to high-Z output
LB, UB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
t
BLZ
t
OH
t
HZ
t
OHZ
t
BHZ
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
BW
70
-
-
-
-
10
5
5
10
0
0
0
70
60
0
60
55
0
0
30
0
5
60
Max
-
70
70
35
35
-
-
-
-
25
25
25
-
-
-
-
-
-
25
-
-
-
-
Min
85
-
-
-
-
10
5
5
10
0
0
0
85
70
0
70
60
0
0
35
0
5
70
85ns
Max
-
85
85
40
40
-
-
-
-
25
25
25
-
-
-
-
-
-
25
-
-
-
-
100ns
Min
100
-
-
-
-
10
5
5
15
0
0
0
100
80
0
80
70
0
0
40
0
5
80
Max
-
100
100
50
50
-
-
-
-
30
30
30
-
-
-
-
-
-
30
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
1. Industrial product = 20µA
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
Typ
-
0.5
-
-
Max
3.6
15
1)
-
-
Unit
V
µA
ms
5
Revision 1.0
November 1998
京公网安备 11010802033920号
EEWORLD
