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Datasheet> All Categories > Discrete semiconductor> The transistor> DMP3050LSS-13
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DMP3050LSS-13

Description
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size222KB，6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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Power Field-Effect Transistor, 4.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8

DMP3050LSS-13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time18 weeks
Samacsys DescriptionMOSFET 30V P-CH MOSFET
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)4.8 A
Maximum drain current (ID)4.8 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.7 W
Maximum pulsed drain current (IDM)30 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

DMP3050LSS-13 Preview

DMP3050LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(ON)
max
45mΩ @ V
GS
= -10V
80mΩ @ V
GS
= -4.5V
I
D
max
T
A
= 25°C
-4.8A
-3.5A
Features
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Applications
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Drain
SO-8
S
S
S
G
D
D
D
D
Source
Gate
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3050LSS-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
Logo
P3050LS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
1 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 4)
Symbol
V
DSS
V
GSS
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
I
D
I
D
I
S
I
DM
Value
-30
±25
-4.8
-3.8
-6.3
-4.9
-3.0
-30
Units
V
V
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 5) V
GS
= -10V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Steady State
t<10s
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
1.7
1.1
73
37
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
36
61
4.8
-0.7
620
83
62
10.8
5.1
10.5
1.8
1.9
6.8
4.9
28.4
12.4
14
11
Max
-
-1
±100
-2.0
45
80
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -5A
V
DS
= -10V, I
D
= -5.3A
V
GS
= 0V, I
S
= -1.7A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -6A
V
DD
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -1A
I
F
= 12A, di/dt = 500A/μs
4. AEC-Q101 V
GS
maximum is ±20V
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LSS
20
V
GS
= -10V
V
GS
= -5.0V
20
V
DS
= -5.0V
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
V
GS
= -4.0V
NEW PRODUCT
10
V
GS
= -3.5V
-I
D
, DRAIN CURRENT (A)
15
15
10
5
V
GS
= -3.0V
5
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
0
V
GS
= -2.5V
0
0.5
1.0
1.5
2.0
2.5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
3.0
0
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.10
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.12
0.10
0.08
0.08
0.06
0.06
0.04
0.04
0.02
0.02
0
0
0
4
8
12
16
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
3
4
5
6
7
8
9
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.10
V
GS
= -4.5V
1.7
1.5
0.08
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.3
0.06
T
A
= 150
°
C
T
A
= 125
°
C
1.1
0.04
T
A
= 85
°
C
T
A
= 25
°
C
0.9
0.02
T
A
= -55
°
C
0.7
0.5
-50
0
0
5
10
15
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
20
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
3 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LSS
0.10
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2.0
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
0.08
NEW PRODUCT
0.06
V
GS
= -4.5V
I
D
= -5A
0.04
V
GS
= -10V
I
D
= -10A
0.02
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 7 On-Resistance Variation with Temperature
0
-50
20
-I
S
, SOURCE CURRENT (A)
16
C
T
, JUNCTION CAPACITANCE (pF)
1,000
C
iss
12
8
100
C
oss
C
rss
4
0
0.4
0.6
0.8
1.0
1.2
1.4
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
30
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
100
R
DS(on)
Limited
P
W
= 10µs
8
-I
D
, DRAIN CURRENT (A)
10
6
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
4
2
0.1
T
J(max)
= 150°C
0
0
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
2
12
T
A
= 25°C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
4 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LSS
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 87°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
45
°
A2 A A3
e
D
b
7
°~
9
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMP3050LSS
Document number: DS35647 Rev. 4 - 2
5 of 6
www.diodes.com
September 2012
© Diodes Incorporated
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